NPN silicon phototransistor

•T-1 package style\n• Variety of sensitivity ranges\n• Choice of narrow or wide receiving angle\n• Small package size ideal for space-limited applications\n• 0.050” [1.27mm] or 0.100” [2.54mm] lead spacing;

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

NPN SILICON PHOTOTRANSISTOR

Description The OP505W consist of NPN silicon phototransistors molded in blue tinted plastic packages. The wide receiving angle provides relatively even reception over a large area. This device is 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

封装/外壳：T-1 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR PHOTO 935NM TOP VIEW T1 传感器，变送器 光学传感器 - 光电晶体管

Phototransistor

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

封装/外壳：T-1 包装：散装 描述：SENSOR PHOTO 935NM TOP VIEW T1 传感器，变送器 光学传感器 - 光电晶体管

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

Phototransistor

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages