NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN silicon phototransistor

•Flat lensed for wide acceptance angle (OP508F)\n• Easily stackable on 0.100” (2.54 mm) hole centers\n• Inexpensive plastic package\n• Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes;

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistors

Description The OP508F series consists of NPN silicon phototransistor molded in flat, black plastic, end looking packages. The flat sensing surface allows an acceptance half angle 60° measured from the optical axis to the half power point. The black plastic package significantly reduces ambient l

NPN Silicon Phototransistors

Description The OP508F series consists of NPN silicon phototransistor molded in flat, black plastic, end looking packages. The flat sensing surface allows an acceptance half angle 60° measured from the optical axis to the half power point. The black plastic package significantly reduces ambient l

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistors

Description The OP508F series consists of NPN silicon phototransistor molded in flat, black plastic, end looking packages. The flat sensing surface allows an acceptance half angle 60° measured from the optical axis to the half power point. The black plastic package significantly reduces ambient l

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

Phototransistor

封装/外壳：径向 包装：散装 描述：SENSOR PHOTO 890NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

封装/外壳：径向 包装：散装 描述：SENSOR PHOTO 890NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

POWER TRANSISTORS(5A,1500V,125W)

HORIZONTAL DEFLECTION TRANSISTOR

HIGH EFFICIENCY RECTIFIERS(5.0A,600-1000V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and