Descripton:

Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point.

Features:

• Flat lensed for wide acceptance angle (OP508F)

• Lensed for high sensitvity (OP509)

• Easily stackable on 0.100” (2.54 mm) hole centers

• Inexpensive plastc package

• Mechanically and spectrally matched to OP168 and OP268 series of infrared emitng diodes

Applicatons:

• Applicatons requiring a wide acceptance angle

• Applicatons requiring high sensitvity

• Space-limited applicatons