NPN SILICON PHOTOTRANSISTORS

NPN silicon phototransistor

•Lensed for high sensitivity (OP509)\n• Easily stackable on 0.100” (2.54 mm) hole centers\n• Inexpensive plastic package\n• Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes;

NPN Silicon Phototransistors

Descripton: The OP509F series consists of a NPN silicon phototransistor mounted in lensed, clear plastic end looking packages. Features: • Lensed for high sensitvity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package • Mechanically and spectrally matched to th

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN Silicon Phototransistors

Descripton: The OP509F series consists of a NPN silicon phototransistor mounted in lensed, clear plastic end looking packages. Features: • Lensed for high sensitvity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package • Mechanically and spectrally matched to th

NPN Silicon Phototransistors

Descripton: The OP509F series consists of a NPN silicon phototransistor mounted in lensed, clear plastic end looking packages. Features: • Lensed for high sensitvity • Easily stackable on 0.100 inch (2.54 mm) hole centers • Low cost plastic package • Mechanically and spectrally matched to th

NPN Silicon Phototransistors

Descripton: Each device in the OP508F series consists of a NPN silicon phototransistor mounted in a flat, black plastc “end-looking” package. The flat sensing surface allows an acceptance half-angle of 60° when measured from the optcal axis to the half power point. Features: • Flat lensed for wid

NPN Silicon Phototransistor

Features: • Flat lensed for wide acceptance angle (OP508F) • Lensed for high sensitivity (OP509) • Easily stackable on 0.100” (2.54 mm) hole centers • Inexpensive plastic package • Mechanically and spectrally matched to OP168 and OP268 series of infrared emitting diodes Description: The OP5

NPN SILICON PHOTOTRANSISTORS

NPN SILICON PHOTOTRANSISTORS

封装/外壳：径向 包装：卷带（TR） 描述：SENSOR PHOTO 890NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

封装/外壳：径向 包装：散装 描述：SENSOR PHOTO 890NM TOP VIEW RAD 传感器，变送器 光学传感器 - 光电晶体管

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 5185 A Surge current 50 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 5185 A Surge current 50 kA

SCHOTTKY BARRIER RECTIFIERS(5.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

3.3-V PHASE-LOCK LOOP CLOCK DRIVER

文件：132.48 Kbytes Page：9 Pages

3.3-V PHASE-LOCK LOOP CLOCK DRIVER

文件：132.48 Kbytes Page：9 Pages