Infrared Selected NPN Silicon Phototransistors

Description The OP505 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent on-axis coupling. These devices are 100 production tested using infrared light for close correlation with Optecks GaAs and GaAIAs emit

NPN Silicon Phototransistor

文件：1.68854 Mbytes Page：10 Pages

封装/外壳：T-1 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR PHOTO 935NM TOP VIEW T1 传感器，变送器 光学传感器 - 光电晶体管

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complementary MOS FETs are provided in one package. • Automatic mounting

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages

High-Speed, Programmable-Supply Current, Monolithic Op Amp

文件：735.29 Kbytes Page：12 Pages