MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

Single N-Channel Power MOSFET 60V, 33A, 15.6 mΩ

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 15.6 m, 33 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

OptiMOSTM Power-MOSFET, 60 V

Features • Double side cooled package-with lowest Juntion-top thermal resistance • 175°C rated • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • High

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

OptiMOSTM Power-MOSFET

文件：610.8 Kbytes Page：10 Pages

OptiMOSTM Power-MOSFET, 60 V

文件：1.41665 Mbytes Page：13 Pages

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 16.3 m, 32 A

文件：225.64 Kbytes Page：8 Pages