Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

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Single N-Channel Power MOSFET 30V, 11.6A, 9.0mΩ

30V N-Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (VGS = 10V)

VDS (V) =3

N-Channel 30-V (D-S) MOSFET

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Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

文件：119.38 Kbytes Page：5 Pages

6 Digit Non-Reset Counter

• Low cost, large quantity discounts • Patented high-performance mechanism • UL and cUL approved (49 Series) • Rugged plastic package • Wide range of voltages available • Long life Key Features • Mail Equipment • Photo Machines • Vending Machines • Gaming Machines • Elevators • Copy

30V Dual N-Channel MOSFET with Schottky Diode

General Description The AO4916 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchro

VHB™ Tape Specialty Tapes

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VHB Tape - Specialty Tapes

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Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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