Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

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Single N-Channel Power MOSFET 30V, 11.6A, 9.0mΩ

丝印代码：4916N；30V N-Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (VGS = 10V)

VDS (V) =3

N-Channel 30-V (D-S) MOSFET

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Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

文件：119.38 Kbytes Page：5 Pages

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

PNP Small Signal General Purpose Amplifiers & Switches

PNP Small Signal General Purpose Amplifiers & Switches

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

SMPS-IC with MOSFET Driver Output

Features • High clock frequency • Low current drain • High reference accuracy • All monitoring functions