SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

SUPER LOW NOISE InGaAs HEMT

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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6 Digit Non-Reset Counter

• Low cost, large quantity discounts • Patented high-performance mechanism • UL and cUL approved (49 Series) • Rugged plastic package • Wide range of voltages available • Long life Key Features • Mail Equipment • Photo Machines • Vending Machines • Gaming Machines • Elevators • Copy

30V Dual N-Channel MOSFET with Schottky Diode

General Description The AO4916 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchro

VHB™ Tape Specialty Tapes

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VHB Tape - Specialty Tapes

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Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

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