SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION\nThe MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series is m • Low noise figure                  @f=12GHz\n         MGF4916G:NFmin.=0.80dB(MAX.)\n         MGF4919G:NFmin.=0.50dB(MAX.)\n• High associated gain            @f=12GHz\n         Gs=12.0dB(MIN.)\n\nAPPLICATION\nL to Ku band low noise amplifiers.;

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

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TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

PNP Small Signal General Purpose Amplifiers & Switches

PNP Small Signal General Purpose Amplifiers & Switches

SMPS-IC with MOSFET Driver Output

Features • High clock frequency • Low current drain • High reference accuracy • All monitoring functions