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NTMS4916

丝印代码:4916N;30V N-Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (VGS = 10V)   VDS (V) =3

UMW

友台半导体

Single N-Channel Power MOSFET 30V, 11.6A, 9.0mΩ

Power MOSFET, 30 V, 11.4 A, N-Channel, SOIC8 • Low rDS(on) to Minimize Conduction Loss\n• Low Capacitance to Minimize Driver Losses\n• Optimized Gate Charge to Minimize Switching Losses\n• Optimized for 5 V, 12 V Gate Drives\n• RoHS Compliant;

ONSEMI

安森美半导体

丝印代码:4916N;30V N-Channel MOSFET

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (VGS = 10V)   VDS (V) =3

UMW

友台半导体

Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

文件:119.38 Kbytes Page:5 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 11.6 A, N?묬hannel, SO?? Low RDS(on) to Minimize Conduction Losses

文件:119.38 Kbytes Page:5 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:1.00714 Mbytes Page:9 Pages

VBSEMI

微碧半导体

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

CDI-DIODE

PNP Small Signal General Purpose Amplifiers & Switches

PNP Small Signal General Purpose Amplifiers & Switches

FAIRCHILD

仙童半导体

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

MITSUBISHI

三菱电机

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

MITSUBISHI

三菱电机

SMPS-IC with MOSFET Driver Output

Features • High clock frequency • Low current drain • High reference accuracy • All monitoring functions

SIEMENS

西门子

NTMS4916产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    30

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    2.5

  • ID Max (A):

    9.4

  • PD Max (W):

    1.98

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    12

  • RDS(on) Max @ VGS = 10 V(mΩ):

    9

  • Qg Typ @ VGS = 4.5 V (nC):

    17.4

  • Qg Typ @ VGS = 10 V (nC):

    15

  • Ciss Typ (pF):

    1376

  • Package Type:

    SOIC-8

更新时间:2026-7-24 18:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
只做原装正品
ONSemiconductor
24+
NA
3000
进口原装正品优势供应
ON/安森美
2450+
SOP8
6540
只做原装正品假一赔十为客户做到零风险!!
ON/安森美
25+
SOP-8
37821
ON/安森美全新特价NTMS4916NR2G即刻询购立享优惠#长期有货
ON(安森美)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
23+
17611
公司只做原装正品,假一赔十
ON
25+23+
SOP
25629
绝对原装正品全新进口深圳现货
ON/安森美
25+
SMD
20000
原装
ON(安森美)
26+
NA
60000
只有原装 可配单
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品

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