位置：首页 > IC中文资料 > NTH4L160N120SC1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTH4L160N120SC1 | Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ | ONSEMI 安森美半导体 |   | |
NTH4L160N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ | ONSEMI 安森美半导体 | | |
NTH4L160N120SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L | ONSEMI 安森美半导体 | | |
NTH4L160N120SC1 | MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A 文件：277.86 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve | ONSEMI 安森美半导体 | | ||
MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A 文件：277.94 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PULSE |
23+ |
NA |
5606 |
专做原装正品,假一罚百! |
|||
THAILAND |
24+ |
SOP-8 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
onsemi |
23+ |
115 |
加QQ:78517935原装正品有单必成 |
||||
PULSE/普思 |
2450+ |
SOP |
9850 |
只做原装正品现货或订货假一赔十! |
|||
PULSE |
23+ |
SMD |
8160 |
原厂原装 |
|||
PULSE |
25+23+ |
na |
37995 |
绝对原装正品全新进口深圳现货 |
|||
THAILAND |
22+ |
SOP-8 |
3000 |
原装正品,支持实单 |
|||
onsemi(安森美) |
24+ |
TO-247-4 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
PULSE |
25+ |
SMD8 |
2568 |
原装优势!绝对公司现货 |
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DdatasheetPDF页码索引
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