Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A

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Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second leve

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.5 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 160 m, 17.3 A

文件：277.86 Kbytes Page：8 Pages