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NTE29价格
参考价格：￥26.2542
型号：NTE2905 品牌：NTE Electronics 备注：这里有NTE29多少钱，2024年最近7天走势，今日出价，今日竞价，NTE29批发/采购报价，NTE29行情走势销售排行榜，NTE29报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTE29 | Silicon Complementary Transistors High Power, High Current Switch Description: TheNTE29(NPN)andNTE30(PNP)arecompelmentarypowertransistorsinaTO3typecasedesignedforuseinhighpoweramplifierandswitchingcircuitapplications. Features: ●HighCurrentCapability:IC=50A(Continuous) ●DCCurrentGain:hFE=15to60@IC=25A ● | NTE NTE Electronics, Inc |  |   |
Silicon Complementary Transistors Audio Power Amplifier, Switch Applications: •1WAudioPowerAmplifierApplications •SwitchingApplications | NTE NTE Electronics, Inc | | | |
MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
N-Channel Silicon Junction Field Effect Transistor Description: TheNTE2902isafieldeffecttransistorinaTO92typepackagedesignedforuseinVHF/UHFamplifierapplications. AbsoluteMaximumRatings:(Note1) Drain-SourceVoltage,VDS....................................25V Gate-SourceVoltag | NTE NTE Electronics, Inc | | | |
Silicon Complementary Transistors Audio Power Amplifier Features: ●HighBreakdownVoltage:V(BR)CEO=80VMin ●HighCurrent:IC=500mA ●LowSaturationVoltage | NTE NTE Electronics, Inc | | | |
Silicon Complementary Transistors Medium Power Amp, Switch Description: TheNTE291(NPN)andNTE292(PNP)areGeneral–PurposeMedium–PowersiliconcomplementarytransistorsinaTO220typepackagedesignedforswitchingandamplifierapplications.Theyareespeciallydesignedforseriesandshuntregulatorsandasadriverandoutputstageofhigh–fide | NTE NTE Electronics, Inc | | | |
N−Ch, Enhancement Mode High Speed Switch Features: *AdvancedProcessTechnology *Dynamicdv/dtRating *+175COperatingTemperature *FastSwitching *FullyAvalancheRated *EaseofParalleling | NTE NTE Electronics, Inc | | | |
Silicon Complementary Transistors Medium Power Amp, Switch Description: TheNTE291(NPN)andNTE292(PNP)areGeneral–PurposeMedium–PowersiliconcomplementarytransistorsinaTO220typepackagedesignedforswitchingandamplifierapplications.Theyareespeciallydesignedforseriesandshuntregulatorsandasadriverandoutputstageofhigh–fide | NTE NTE Electronics, Inc | | | |
MOSFET N-Ch, Enhancement Mode High Speed Switch Features: Dynamicdv/dtRating IsolatedCentralMountingHole FastSwitching +175°COperatingTemperature EaseofParalleling SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancheRated ●IsolatedCentralMountingHole ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
Silicon Complementary Transistors Audio Amplifier and Driver Description: TheNTE293(NPN)andNTE294(PNP)aresiliconcomplementarytransistorsinaGiantTO92typepackagedesignedforuseinlow–frequencypoweramplificationanddriveapplications. Features: ●LowCollector–EmitterSaturationVoltage | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea •LowerRDS(on):0.032ΩTyp •LowerLeakageCurrent:10µA(Max)@VDS=100V | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.144ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=200V | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.071ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=200V | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.437ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=400V | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.254ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=400V | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.638ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=500V | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.308ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=500V | NTE NTE Electronics, Inc | | | |
Silicon Complementary Transistors Audio Amplifier and Driver Description: TheNTE293(NPN)andNTE294(PNP)aresiliconcomplementarytransistorsinaGiantTO92typepackagedesignedforuseinlow–frequencypoweramplificationanddriveapplications. Features: ●LowCollector–EmitterSaturationVoltage | NTE NTE Electronics, Inc | | | |
MOSFET N−Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain−SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●TO220TypeIsolatedPackage | NTE NTE Electronics, Inc | | | |
MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●TO220TypeIsolatedPackage | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●TO220TypeIsolatedPackage | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●TO220TypeIsolatedPackage | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability ●TO220TypeIsolatedPackage | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowStaticDrain–SourceONResistance ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability ●TO220TypeIsolatedPackage | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: LowStaticDrain–SourceONResistance ImprovedInductiveRuggedness FastSwitchingTimes LowInputCapacitance ExtendedSafeOperatingArea ImprovedHighTemperatureReliability TO220TypeIsolatedPackage AbsoluteMaximumRatings: Drain–SourceVoltage(Note | NTE NTE Electronics, Inc | | | |
Silicon NPN Transistor RF Power Output, Driver AbsoluteMaximumRatings:(TA=+25°Cunlessotherwisespecified) Collector–BaseVoltage,VCBO.......................................................75V Collector–EmitterVoltage(RBE=150Ω),VCER................. | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●MotorControl ●LampControl ●SolenoidControl ●DC–DCConverter | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●MotorControl ●LampControl ●SolenoidControl ●DC–DCConverter | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Application: ●CSSwitchforCRTDisplayMonitor | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●ServoMotorDrive ●Robot ●UPS ●Inverter ●FluorescentLamp | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●SMPS ●DC–DCConverter ●BatteryCharger ●PowerSupplyofPrinter ●Copier ●HDD,FDD,TV,VCR ●PersonalComputer | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●SMPS ●DC–DCConverter ●BatteryCharger ●PowerSupplyofPrinter ●Copier ●HDD,FDD,TV,VCR ●PersonalComputer | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●SMPS ●DC–DCConverter ●BatteryCharger ●PowerSupplyofPrinter ●Copier ●HDD,FDD,TV,VCR ●PersonalComputer | NTE NTE Electronics, Inc | | | |
Silicon PNP Transistor General Purpose Amplifier Description: TheNTE296isasiliconPNPtransistorinaTO202typecasedesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages,lowsaturationvoltagesandlowcapacitance. | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●SMPS ●DC–DCConverter ●BatteryCharger ●PowerSupplyofPrinter ●Copier ●HDD,FDD,TV,VCR ●PersonalComputer | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●MotorControl ●LampControl ●SolenoidControl ●DC–DCConverter | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●MotorControl ●LampControl ●SolenoidControl ●DC–DCConverter | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent ●LowStaticDrain–SourceOn–StateResistance | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent ●LowStaticDrain–SourceOn–StateResistance | NTE NTE Electronics, Inc | | | |
Silicon Complementary Transistors Audio Amplifier, Driver Features: ●HighCollector–EmitterVoltage ●Idealfor25–30WLow–FrequencyOutputDrive | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●SMPS ●DC–DCConverter ●BatteryCharger ●PowerSupplyofPrinter ●Copier ●HDD,FDD,TV,VCR ●PersonalComputer | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●SMPS ●DC–DCConverter ●BatteryCharger ●PowerSupplyofPrinter ●Copier ●HDD,FDD,TV,VCR ●PersonalComputer | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ●SMPS ●DC–DCConverter ●BatteryCharger ●PowerSupplyofPrinter ●Copier ●HDD,FDD,TV,VCR ●PersonalComputer | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch MOSFETN-Channel,EnhancementModeHighSpeedSwitch Applications: SMPS DC–DCConverter BatteryCharger PowerSupplyofPrinter Copier HDD,FDD,TV,VCR PersonalComputer | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowOn–StateResistance:RDS(on)=1.1ΩMax(VGS=10V,ID=3A) ●LowInputCapacitance:Ciss=1150pFTyp ●HighAvalancheCapabilityRatings ●IsolatedTO220TypePackage | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AdvancedProcessTechnology ●UltraLowOn–StateResistance ●Dynamicdv/dtRating ●+175°COperatingTemperature ●FastSwitching ●FullyAvalancheRated | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●LowInputCapacitance ●LowStaticRDS(on) ●FastSwitchingTime ●GuaranteedAvalancheResistance Applications: ●SwitchingPowerSupplyofAC240VInput ●HighVoltagePowerSupply ●Inverter | NTE NTE Electronics, Inc | | | |
Silicon Complementary Transistors Audio Amplifier, Driver Features: ●HighCollector–EmitterVoltage ●Idealfor25–30WLow–FrequencyOutputDrive | NTE NTE Electronics, Inc | | | |
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●LogicLevelGateDrive ●RDS(on)SpecifiedatVGS=4V&5V ●FastSwitching | NTE NTE Electronics, Inc | | | |
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●RepetitiveAvalancherated ●LogicLevelGateDrive ●RDS(on)SpecifiedatVGS=4V&5V | NTE NTE Electronics, Inc | | | |
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●LogicLevelGateDrive ●RDS(on)SpecifiedatVGS=4V&5V ●+175°COperatingTemperature ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●LogicLevelGateDrive ●RDS(on)SpecifiedatVGS=4V&5V ●+175°COperatingTemperature ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●Dynamicdv/dtRating ●LogicLevelGateDrive ●RDS(on)SpecifiedatVGS=4V&5V ●+175°COperatingTemperature ●FastSwitching ●EaseofParalleling ●SimpleDriveRequirements | NTE NTE Electronics, Inc | | | |
Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●AvalancheRuggedTechnology ●LogicLevelGateDrive ●RDS(on)=0.09ΩTyp.atVGS=5V ●+175°COperatingTemperature ●FastSwitching ●LowGateCharge ●HighCurrentCapability | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Description: TheNTE2988isanN–Channel,enhancementmode,powerfieldeffecttransistorinaTO52typepackagedesignedespeciallyforlowpowerinverters,interfacetoCMOSandTTLlogic,andlinedrivers. Features: ●HighInputImpedance ●ExtremelyFastSwitching ●Rugged–Dis | NTE NTE Electronics, Inc | | | |
MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ●HighSpeedSwitching ●LowOn–Resistance ●NoSecondaryBreakdown ●LowDrivingPower ●HighVoltage ●RepetitiveAvalancheRated Applications: ●SwitchingRegulators ●UPS ●DC–DCConverters ●GeneralPurposePowerAmplifier | NTE NTE Electronics, Inc | | |
NTE29产品属性
- 类型
描述
- 型号
NTE29
- 制造商
NTE Electronics
- 功能描述
T-NPN-SI-HIGH POWER AMP
- 制造商
NTE Electronics
- 功能描述
Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NTE Electronics |
21+ |
n/a |
394 |
原装正品订货,请确认 |
|||
NTE |
23+ |
65480 |
|||||
NTE |
22+ |
TO-252 |
9200 |
郑重承诺只做原装进口货 |
|||
NTE |
24+25+/26+27+ |
TO-92-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NTE |
39330 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
NTE |
D16 |
Rohsv |
5000 |
全新原装现货 样品可售 |
|||
2022+ |
1 |
全新原装 货期两周 |
|||||
新 |
5 |
全新原装 货期两周 |
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NTE29规格书下载地址
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NTE29数据表相关新闻
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