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NTE29价格

参考价格：￥26.2542

型号：NTE2905 品牌：NTE Electronics 备注：这里有NTE29多少钱，2025年最近7天走势，今日出价，今日竞价，NTE29批发/采购报价，NTE29行情走势销售排行榜，NTE29报价。

型号	功能描述	生产厂家&企业	LOGO
NTE29	Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: ● High Current Capability: IC = 50A (Continuous) ● DC Current Gain: hFE= 15 to 60 @ IC = 25A ●	NTE	NTE
NTE290	Silicon Complementary Transistors Audio Power Amplifier, Switch Applications: • 1W Audio Power Amplifier Applications • Switching Applications	NTE	NTE
NTE2900	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements	NTE	NTE
NTE2902	N-Channel Silicon Junction Field Effect Transistor Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolute Maximum Ratings: (Note 1) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltag	NTE	NTE
NTE290A	Silicon Complementary Transistors Audio Power Amplifier Features: ● High Breakdown Voltage: V(BR)CEO = 80V Min ● High Current: IC = 500mA ● Low Saturation Voltage	NTE	NTE
NTE291	Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fide	NTE	NTE
NTE2916	N−Ch, Enhancement Mode High Speed Switch Features: * Advanced Process Technology * Dynamic dv/dt Rating * +175C Operating Temperature * Fast Switching * Fully Avalanche Rated * Ease of Paralleling	NTE	NTE
NTE292	Silicon Complementary Transistors Medium Power Amp, Switch Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fide	NTE	NTE
NTE2920	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: Dynamic dv/dt Rating Isolated Central Mounting Hole Fast Switching +175°C Operating Temperature Ease of Paralleling Simple Drive Requirements	NTE	NTE
NTE2921	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mounting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements	NTE	NTE
NTE2922	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mounting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements	NTE	NTE
NTE2923	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mounting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements	NTE	NTE
NTE2924	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mounting Hole ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements	NTE	NTE
NTE293	Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: ● Low Collector–Emitter Saturation Voltage	NTE	NTE
NTE2930	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower RDS(on): 0.032Ω Typ • Lower Leakage Current: 10µA (Max) @ VDS = 100V	NTE	NTE
NTE2931	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.144Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V	NTE	NTE
NTE2932	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.071Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V	NTE	NTE
NTE2933	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.437Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V	NTE	NTE
NTE2934	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.254Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V	NTE	NTE
NTE2935	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.638Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V	NTE	NTE
NTE2936	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.308Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V	NTE	NTE
NTE294	Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: ● Low Collector–Emitter Saturation Voltage	NTE	NTE
NTE2940	MOSFET N−Channel, Enhancement Mode High Speed Switch Features: ● Low Static Drain−Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● TO220 Type Isolated Package	NTE	NTE
NTE2941	MOSFET N-Ch, Enhancement Mode High Speed Switch Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● TO220 Type Isolated Package	NTE	NTE
NTE2942	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● TO220 Type Isolated Package	NTE	NTE
NTE2943	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● TO220 Type Isolated Package	NTE	NTE
NTE2944	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability ● TO220 Type Isolated Package	NTE	NTE
NTE2945	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Low Static Drain–Source ON Resistance ● Improved Inductive Ruggedness ● Fast Switching Times ● Low Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability ● TO220 Type Isolated Package	NTE	NTE
NTE2946	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: Low Static Drain–Source ON Resistance Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability TO220 Type Isolated Package Absolute Maximum Ratings: Drain–Source Voltage (Note	NTE	NTE
NTE295	Silicon NPN Transistor RF Power Output, Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Emitter Voltage (RBE = 150Ω), VCER . . . . . . . . . . . . . . . . .	NTE	NTE
NTE2953	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● Motor Control ● Lamp Control ● Solenoid Control ● DC–DC Converter	NTE	NTE
NTE2954	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● Motor Control ● Lamp Control ● Solenoid Control ● DC–DC Converter	NTE	NTE
NTE2955	MOSFET N-Channel, Enhancement Mode High Speed Switch Application: ● CS Switch for CRT Display Monitor	NTE	NTE
NTE2956	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● Servo Motor Drive ● Robot ● UPS ● Inverter ● Fluorescent Lamp	NTE	NTE
NTE2957	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● SMPS ● DC–DC Converter ● Battery Charger ● Power Supply of Printer ● Copier ● HDD, FDD, TV, VCR ● Personal Computer	NTE	NTE
NTE2958	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● SMPS ● DC–DC Converter ● Battery Charger ● Power Supply of Printer ● Copier ● HDD, FDD, TV, VCR ● Personal Computer	NTE	NTE
NTE2959	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● SMPS ● DC–DC Converter ● Battery Charger ● Power Supply of Printer ● Copier ● HDD, FDD, TV, VCR ● Personal Computer	NTE	NTE
NTE296	Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance.	NTE	NTE
NTE2960	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● SMPS ● DC–DC Converter ● Battery Charger ● Power Supply of Printer ● Copier ● HDD, FDD, TV, VCR ● Personal Computer	NTE	NTE
NTE2966	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● Motor Control ● Lamp Control ● Solenoid Control ● DC–DC Converter	NTE	NTE
NTE2967	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● Motor Control ● Lamp Control ● Solenoid Control ● DC–DC Converter	NTE	NTE
NTE2968	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Low Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current ● Low Static Drain–Source On–State Resistance	NTE	NTE
NTE2969	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Low Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current ● Low Static Drain–Source On–State Resistance	NTE	NTE
NTE297	Silicon Complementary Transistors Audio Amplifier, Driver Features: ● High Collector–Emitter Voltage ● Ideal for 25 – 30W Low–Frequency Output Drive	NTE	NTE
NTE2970	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● SMPS ● DC–DC Converter ● Battery Charger ● Power Supply of Printer ● Copier ● HDD, FDD, TV, VCR ● Personal Computer	NTE	NTE
NTE2971	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● SMPS ● DC–DC Converter ● Battery Charger ● Power Supply of Printer ● Copier ● HDD, FDD, TV, VCR ● Personal Computer	NTE	NTE
NTE2972	MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: ● SMPS ● DC–DC Converter ● Battery Charger ● Power Supply of Printer ● Copier ● HDD, FDD, TV, VCR ● Personal Computer	NTE	NTE
NTE2973	MOSFET N-Channel, Enhancement Mode High Speed Switch MOSFET N-Channel, Enhancement Mode High Speed Switch Applications: SMPS DC–DC Converter Battery Charger Power Supply of Printer Copier HDD, FDD, TV, VCR Personal Computer	NTE	NTE
NTE2974	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Low On–State Resistance: RDS(on) = 1.1Ω Max (VGS = 10V, ID = 3A) ● Low Input Capacitance: Ciss = 1150pF Typ ● High Avalanche Capability Ratings ● Isolated TO220 Type Package	NTE	NTE
NTE2975	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Advanced Process Technology ● Ultra Low On–State Resistance ● Dynamic dv/dt Rating ● +175°C Operating Temperature ● Fast Switching ● Fully Avalanche Rated	NTE	NTE
NTE2976	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Low Input Capacitance ● Low Static RDS(on) ● Fast Switching Time ● Guaranteed Avalanche Resistance Applications: ● Switching Power Supply of AC 240V Input ● High Voltage Power Supply ● Inverter	NTE	NTE
NTE298	Silicon Complementary Transistors Audio Amplifier, Driver Features: ● High Collector–Emitter Voltage ● Ideal for 25 – 30W Low–Frequency Output Drive	NTE	NTE
NTE2980	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Logic Level Gate Drive ● RDS(on) Specified at VGS = 4V & 5V ● Fast Switching	NTE	NTE
NTE2981	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche rated ● Logic Level Gate Drive ● RDS(on) Specified at VGS = 4V & 5V	NTE	NTE
NTE2984	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Logic Level Gate Drive ● RDS(on) Specified at VGS = 4V & 5V ● +175°C Operating Temperature ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements	NTE	NTE
NTE2985	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Logic Level Gate Drive ● RDS(on) Specified at VGS = 4V & 5V ● +175°C Operating Temperature ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements	NTE	NTE
NTE2986	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Dynamic dv/dt Rating ● Logic Level Gate Drive ● RDS(on) Specified at VGS = 4V & 5V ● +175°C Operating Temperature ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements	NTE	NTE
NTE2987	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● Avalanche Rugged Technology ● Logic Level Gate Drive ● RDS(on) = 0.09Ω Typ. at VGS = 5V ● +175°C Operating Temperature ● Fast Switching ● Low Gate Charge ● High Current Capability	NTE	NTE
NTE2988	MOSFET N-Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers. Features: ● High Input Impedance ● Extremely Fast Switching ● Rugged–Dis	NTE	NTE
NTE2989	MOSFET N-Channel, Enhancement Mode High Speed Switch Features: ● High Speed Switching ● Low On–Resistance ● No Secondary Breakdown ● Low Driving Power ● High Voltage ● Repetitive Avalanche Rated Applications: ● Switching Regulators ● UPS ● DC–DC Converters ● General Purpose Power Amplifier	NTE	NTE

NTE29产品属性

类型
描述
型号
NTE29
制造商
NTE Electronics
功能描述
T-NPN-SI-HIGH POWER AMP
制造商
NTE Electronics
功能描述
Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-3

NTE29供应商更多...

更新时间：2025-8-18 8:08:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市东来宝电子科技有限公司	NTE291	NTE	24+	TO-252	9200	郑重承诺只做原装进口现货	询价
中天科工半导体（深圳）有限公司	NTE2984	NTE	25+	TO-220	20300	NTE原装特价NTE2984即刻询购立享优惠#长期有货	询价
深圳市赛尔通科技有限公司	NTE291	NTE	23+		65480		询价
贸泽芯城（深圳）电子科技有限公司	NTE2998	NTE	23+		39330	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
现代芯城（深圳）科技有限公司	NTE29		24+	N/A	58000	一级代理-主营优势-实惠价格-不悔选择	询价
上海金庆电子技术有限公司	NTE2970		新		5	全新原装货期两周	询价
上海市鑫鸿达电子	NTE2970		2022+		1	全新原装货期两周	询价

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NTE29价格

NTE29产品属性

NTE29供应商更多...

NTE29芯片相关品牌

NTE29规格书下载地址

NTE29参数引脚图相关

NTE29数据表相关新闻

NTJD4158CT1G

NTD2955T4G

NTHD4502NT1G

NTJD4001NT2G

NTD3055L104T4G原装现货

NTD5865NLT4G公司原装正品现货

DdatasheetPDF页码索引