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型号 功能描述 生产厂家 企业 LOGO 操作
NTE291

Silicon Complementary Transistors Medium Power Amp, Switch

Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fide

NTE

NTE291

Complementary Transistors

Description:\nThe NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fidelity

NTE

N−Ch, Enhancement Mode High Speed Switch

Features: * Advanced Process Technology * Dynamic dv/dt Rating * +175C Operating Temperature * Fast Switching * Fully Avalanche Rated * Ease of Paralleling

NTE

N-Channel Selector Guide

NTE

N-Channel Selector Guide

NTE

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

NTE291产品属性

  • 类型

    描述

  • 型号

    NTE291

  • 制造商

    NTE Electronics

  • 功能描述

    TRANSISTOR NPN SILICON 130V IC=4A TO-220 CASE GENERAL PURPOSE AMP & SWITCH COMP'

  • 制造商

    NTE Electronics

  • 功能描述

    Small Signal Bipolar Transistor

  • 制造商

    NTE Electronics

  • 功能描述

    T-NPN- SI-PO & SW-PD 40 W

  • 制造商

    NTE Electronics

  • 功能描述

    TO-220 NPN GEN PUR

  • 制造商

    NTE Electronics

  • 功能描述

    BIPOLAR TRANSISTOR, NPN, 130V, 4A, TO-220; Transistor Polarity

  • 制造商

    NTE Electronics

  • 功能描述

    Trans GP BJT NPN 120V 4A 3-Pin(3+Tab) TO-220

更新时间:2026-5-14 16:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NTE
24+
TO-252
9200
郑重承诺只做原装进口现货
NTE
23+
65480
NTE
23+
39329
原厂授权一级代理,专业海外优势订货,价格优势、品种
26+
N/A
46000
一级代理-主营优势-实惠价格-不悔选择
2022+
121
全新原装 货期两周

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