型号 功能描述 生产厂家&企业 LOGO 操作
NTE293

Silicon Complementary Transistors Audio Amplifier and Driver

Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: ● Low Collector–Emitter Saturation Voltage

NTE

NTE Electronics

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower RDS(on): 0.032Ω Typ • Lower Leakage Current: 10µA (Max) @ VDS = 100V

NTE

NTE Electronics

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.144Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V

NTE

NTE Electronics

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.071Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V

NTE

NTE Electronics

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.437Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V

NTE

NTE Electronics

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.254Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V

NTE

NTE Electronics

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.638Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V

NTE

NTE Electronics

NTE

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.308Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V

NTE

NTE Electronics

NTE

Cylindrical Case, High-Current and High-Voltage Circuits

Designed for frequencies ranging from 100 kHz to 3 MHz, Mica Capacitor Types 291, 292, 293 and 294 are well suited for high-current and high-voltage circuits like radio transmitters. Cast in cylindrical cases, these capacitors are electrically equivalent to MIL-C-5 Styles CM75 through CM93 in

CDE

Cornell Dubilier Electronics

CDE

Solid Tantalum Chip Capacitors TANTAMOUNT, Commercial, Surface Mount

FEATURES • Molded case available in six case codes • Terminations: 100 matte tin, standard, tin/lead available • Compatible with “High Volume” automatic pick and place equipment • Meets IEC specification QC300801/US0001 and EIA535BAAC mechanical and performance requirements • Moisture sensit

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SMD Air Wound Coils

文件:70.92 Kbytes Page:2 Pages

FRONTIER

Frontier Electronics

FRONTIER

Tape and Reel Specifications

文件:121.78 Kbytes Page:5 Pages

FRONTIER

Frontier Electronics

FRONTIER

Solid Tantalum Surface Mount Chip Capacitors

文件:401.3 Kbytes Page:22 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

NTE293产品属性

  • 类型

    描述

  • 型号

    NTE293

  • 制造商

    NTE Electronics

  • 功能描述

    TRANSISTOR NPN SILICON 60V IC=1A GIANT TO-92 CASE AUDIO AMP & DRIVER COMP'L TO N

  • 制造商

    NTE Electronics

  • 功能描述

    RF TRANSISTOR NPN -3V 200MHZ TO-92

  • 制造商

    NTE Electronics

  • 功能描述

    RF TRANSISTOR, NPN, -3V, 200MHZ, TO-92

  • 制造商

    NTE Electronics

  • 功能描述

    T-NPN- SI-AF POPD .75 W

  • 制造商

    NTE Electronics

  • 功能描述

    RF TRANSISTOR, NPN, -3V, 200MHZ, TO-92; Transistor

  • Polarity

    NPN; Collector Emitter Voltage

  • V(br)ceo

    50V; Transition Frequency Typ

  • ft

    200MHz; Power Dissipation

  • Pd

    1W; DC Collector

  • Current

    1A; DC Current Gain

  • hFE

    240; No. of

  • Pins

    3 ;RoHS

  • Compliant

    Yes

  • 制造商

    NTE Electronics

  • 功能描述

    Trans GP BJT NPN 50V 1A 3-Pin TO-92

更新时间:2025-8-5 16:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
5
全新原装 货期两周
NTE
23+
39329
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
73000
一级代理-主营优势-实惠价格-不悔选择
2022+
1
全新原装 货期两周

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