Silicon Complementary Transistors Audio Amplifier and Driver

Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: ● Low Collector–Emitter Saturation Voltage

Complementary Transistors

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower RDS(on): 0.032Ω Typ • Lower Leakage Current: 10µA (Max) @ VDS = 100V

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.144Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.071Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 200V

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.437Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.254Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 400V

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.638Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower RDS(on): 0.308Ω Typ ● Lower Leakage Current: 10µA (Max) @ VDS = 500V

N-Channel Selector Guide

N-Channel Selector Guide

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS

SINGLE SUPPLY, LOW POWER DUAL COMPARATORS The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode range–to–ground level with single supply operation. Input offset voltage specifications

Low Power Low Offset Voltage Dual Comparators

文件：322.34 Kbytes Page：15 Pages

Low Power Low Offset Voltage Dual Comparators

文件：322.34 Kbytes Page：15 Pages

Low Power Low Offset Voltage Dual Comparators

文件：322.34 Kbytes Page：15 Pages