Silicon Complementary Transistors Audio Power Amplifier, Switch

Applications: • 1W Audio Power Amplifier Applications • Switching Applications

Complementary Transistors

MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Fast Switching ● Ease of Paralleling ● Simple Drive Requirements

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolute Maximum Ratings: (Note 1) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltag

Silicon Complementary Transistors Audio Power Amplifier

Features: ● High Breakdown Voltage: V(BR)CEO = 80V Min ● High Current: IC = 500mA ● Low Saturation Voltage

N-Channel Selector Guide

N-Channel Selector Guide

P?묬h, Enhancement Mode High Speed Switch

文件：100.99 Kbytes Page：3 Pages

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

Low power dual operational amplifi

DESCRIPTION The 532/358/LM2904 consists of two independent, high gain, internally frequency-compensated operational amplifiers internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages. Operation from dual pow

Burst Mode Memory Controller

文件：318.78 Kbytes Page：20 Pages