Silicon PNP Transistor General Purpose Amplifier

Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance.

MOSFET N-Channel, Enhancement Mode High Speed Switch

Applications: ● SMPS ● DC–DC Converter ● Battery Charger ● Power Supply of Printer ● Copier ● HDD, FDD, TV, VCR ● Personal Computer

MOSFET N-Channel, Enhancement Mode High Speed Switch

Applications: ● Motor Control ● Lamp Control ● Solenoid Control ● DC–DC Converter

MOSFET N-Channel, Enhancement Mode High Speed Switch

Applications: ● Motor Control ● Lamp Control ● Solenoid Control ● DC–DC Converter

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Low Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current ● Low Static Drain–Source On–State Resistance

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Low Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current ● Low Static Drain–Source On–State Resistance

Customer Specification

Construction Diameters (In) 1) Component 1 1 X 1 BUSBAR a) Conductor 18 (SOLID) AWG Tinned Copper 0.040 Applicable Specifications 1) Other ASTM-B33 CID AA59551S18S1T

Customer Specification

Construction 1) Component 1 1 X 1 BUSBAR a) Conductor 18 (SOLID) AWG Tinned Copper 0.040

Commercial 12mm Diameter Composition Variable Resistors

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USING THE Si3400 AND Si3401 POE PD CONTROLLERS IN ISOLATED AND NON-ISOLATED DESIGNS

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N-Channel 100-V (D-S) MOSFET

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