??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 mΩ (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

P-channel Enhancement Mode Power MOSFET

Features VDS= -60V, ID= -20A RDS(ON)

单 P 沟道，功率 MOSFET，-60V，-12A，180mΩ

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件：112.72 Kbytes Page：8 Pages

Power MOSFET

文件：88.01 Kbytes Page：7 Pages

Power MOSFET

文件：64.879 Kbytes Page：8 Pages

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 mΩ (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

Power MOSFET

文件：88.01 Kbytes Page：7 Pages

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件：112.72 Kbytes Page：8 Pages

Power MOSFET

文件：64.879 Kbytes Page：8 Pages

Power MOSFET

文件：64.879 Kbytes Page：8 Pages

Power MOSFET

文件：119.07 Kbytes Page：8 Pages

Power MOSFET

文件：88.01 Kbytes Page：7 Pages

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件：112.72 Kbytes Page：8 Pages

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件：112.72 Kbytes Page：8 Pages

Power MOSFET

文件：119.07 Kbytes Page：8 Pages

Power MOSFET

文件：64.879 Kbytes Page：8 Pages

Power MOSFET

文件：88.01 Kbytes Page：7 Pages

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件：112.72 Kbytes Page：8 Pages

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件：112.72 Kbytes Page：8 Pages

Power MOSFET

文件：119.07 Kbytes Page：8 Pages

Power MOSFET

文件：64.879 Kbytes Page：8 Pages

Power MOSFET

文件：64.879 Kbytes Page：8 Pages

Power MOSFET

文件：88.01 Kbytes Page：7 Pages

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件：112.72 Kbytes Page：8 Pages

Power MOSFET

文件：119.07 Kbytes Page：8 Pages

INFRARED IC INTERNAL INSPECTION SYSTEM

The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conventional systems (in comparisons by HAMAMATSU), at a wavelength of 1.0 µm, maki

1500 MHz Center Frequency

文件：52.5 Kbytes Page：3 Pages

Wire Connectors

文件：401.38 Kbytes Page：1 Pages

1500 MHz Bandpass Filter

文件：72.2 Kbytes Page：3 Pages

ADSL LINE TRANSFORMER

文件：277.44 Kbytes Page：1 Pages