NTD2955价格

参考价格:¥1.3753

型号:NTD2955-1G 品牌:ONSemi 备注:这里有NTD2955多少钱,2025年最近7天走势,今日出价,今日竞价,NTD2955批发/采购报价,NTD2955行情走势销售排行榜,NTD2955报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NTD2955

??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

ONSEMI

安森美半导体

NTD2955

-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 mΩ (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

EVVOSEMI

翊欧

NTD2955

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NTD2955

P-channel Enhancement Mode Power MOSFET

Features VDS= -60V, ID= -20A RDS(ON)

Bychip

百域芯

NTD2955

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件:112.72 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NTD2955

Power MOSFET

文件:88.01 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NTD2955

Power MOSFET

文件:64.879 Kbytes Page:8 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

VBSEMI

微碧半导体

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

VBSEMI

微碧半导体

??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

ONSEMI

安森美半导体

??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

ONSEMI

安森美半导体

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

VBSEMI

微碧半导体

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

Bychip

百域芯

-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 mΩ (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

EVVOSEMI

翊欧

P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

VBSEMI

微碧半导体

Power MOSFET

文件:88.01 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件:112.72 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:64.879 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:64.879 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:119.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:88.01 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件:112.72 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件:112.72 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:119.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:64.879 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:88.01 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件:112.72 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件:112.72 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:119.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:64.879 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:64.879 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:88.01 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET ??0 V, ??2 A, P?묬hannel DPAK

文件:112.72 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:119.07 Kbytes Page:8 Pages

ONSEMI

安森美半导体

INFRARED IC INTERNAL INSPECTION SYSTEM

The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conventional systems (in comparisons by HAMAMATSU), at a wavelength of 1.0 µm, maki

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

1500 MHz Center Frequency

文件:52.5 Kbytes Page:3 Pages

KR

KR Electronics, Inc.

Wire Connectors

文件:401.38 Kbytes Page:1 Pages

HeycoHeyco.

海科

1500 MHz Bandpass Filter

文件:72.2 Kbytes Page:3 Pages

KR

KR Electronics, Inc.

ADSL LINE TRANSFORMER

文件:277.44 Kbytes Page:1 Pages

BOTHHAND

NTD2955产品属性

  • 类型

    描述

  • 型号

    NTD2955

  • 功能描述

    MOSFET -60V -12A P-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
12048
全新原装正品/价格优惠/质量保障
ON
24+
SMD
9750
一级代理分销/现货/可长期供应!!
ON
25+23+
SOT252
35691
绝对原装正品全新进口深圳现货
TECH PUBLIC(台舟)
24+
TO-252
5000
诚信服务,绝对原装原盘。
ON/安森美
12+
TO-252
6
深圳原装无铅现货
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
ON(安森美)
24+
N/A
7300
原厂可订货,技术支持,直接渠道。可签保供合同
ON
22+
TO-252
3000
原装正品,支持实单
ON/安森美
24+
TO252
8950
BOM配单专家,发货快,价格低
ON
24+
TO252TO25
20000
一级代理原装现货假一罚十

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