POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC= 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.)

TO-220-3L Plastic-Encapsulate Transistors

FEATURES General Purpose and Switching Applications

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

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60V,10A,Medium Power PNP Bipolar Transistor

中等功率双极型晶体管

晶体管

TO-220-3L Plastic-Encapsulate Transistors

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PNP Silicon Plastic-Encapsulate Transistor

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Complementary Silicon power transistors (10A / 60V / 75W)

DESCRIPTION The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A. FEATURES ● Designed for general-purpose switching and amplifier applications.

General Purpose Transistor

Features - General Purpose and Switching Application

COMPLEMENTARY SILICON POWER TRANSISTORS

Power Transistors

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications

General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC= 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.)

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC= -4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

Silicon PNP Power Transistors MJE2955T

DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC=-4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier andswitching applications. Pinning 1 = Base 2 = Collector 3 = Emitter

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

COMPLEMENTARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955Tis designed for general purpose of amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP transistor in a TO-220 Plastic Package.

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TO-220 - Power Transistors and Darlingtons

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封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE TRANSISTOR

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High Voltage Power Transistors

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Silicon NPN Power Transistors

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10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

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HIGH VOLTAGE TRANSISTOR

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High Voltage Power Transistors

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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HIGH VOLTAGE TRANSISTOR

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INFRARED IC INTERNAL INSPECTION SYSTEM

The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conventional systems (in comparisons by HAMAMATSU), at a wavelength of 1.0 µm, maki

1500 MHz Center Frequency

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Wire Connectors

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1500 MHz Bandpass Filter

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ADSL LINE TRANSFORMER

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