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MJE2955晶体管资料
MJE2955别名:MJE2955三极管、MJE2955晶体管、MJE2955晶体三极管
MJE2955生产厂家:美国摩托罗拉半导体公司
MJE2955制作材料:Si-PNP
MJE2955性质:低频或音频放大 (LF)_功率放大 (L)
MJE2955封装形式:直插封装
MJE2955极限工作电压:70V
MJE2955最大电流允许值:10A
MJE2955最大工作频率:<1MHZ或未知
MJE2955引脚数:3
MJE2955最大耗散功率:90W
MJE2955放大倍数:
MJE2955图片代号:B-21
MJE2955vtest:70
MJE2955htest:999900
- MJE2955atest:10
MJE2955wtest:90
MJE2955代换 MJE2955用什么型号代替:BD208,BD214/80,BD608,
MJE2955价格
参考价格:¥1.6227
型号:MJE2955T 品牌:STMICROELECTRONICS 备注:这里有MJE2955多少钱,2024年最近7天走势,今日出价,今日竞价,MJE2955批发/采购报价,MJE2955行情走势销售排行榜,MJE2955报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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MJE2955 | POWERTRANSISTORS(10A,60V,75W) COMPLEMENTARYSILICONPOWERTRANSISTORS. | MOSPEC MOSPEC | ||
MJE2955 | GeneralPurposeandSwitchingApplications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGainBandwidthProduct:fT=2MHz(Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MJE2955 | TO-220-3LPlastic-EncapsulateTransistors FEATURES GeneralPurposeandSwitchingApplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
MJE2955 | PNPSiliconPlastic-EncapsulateTransistor 文件:252.97 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体公司 | ||
MJE2955 | TO-220-3LPlastic-EncapsulateTransistors 文件:1.42493 Mbytes Page:3 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
ComplementarySiliconpowertransistors(10A/60V/75W) DESCRIPTION TheMJE3055Aisasiliconepitaxial-baseplanarNPNtransistorinTO-220ABpackage. ltisintendedforuseingeneral-purposeamplifierandswitdingapplications. ThecomplementaryPNPtypeisMJE2955A. FEATURES ●Designedforgeneral-purposeswitchingandamplifierapplications. | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | |||
GeneralPurposeTransistor Features -GeneralPurposeandSwitchingApplication | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
COMPLEMENTARYSILICONPOWERTRANSISTORS COMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseingeneral-purposeamplifierandswitchingapplications FEATURES: *PowerDissipation-PD=75W©Tc=25°C *DCCurrentGainhFE=20-100©lc=4.0A *vCE(isrt)=1-1V(Max.)©lc=4.0A,IB=400mA | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
COMPLEMENTARYSILICONPOWERTRANSISTORS PowerTransistors | CentralCentral Semiconductor Corp 美国中央半导体 | |||
PLASTICPOWERTRANSISTORS PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications | CDIL CDIL | |||
GeneralPurposeandSwitchingApplications GeneralPurposeandSwitchingApplications •DCCurrentGainSpecifiedtoIC=10A •HighCurrentGainBandwidthProduct:fT=2MHz(Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
ComplementarySiliconPowerTtransistors DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistorsMJE2955T DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE3055T ·DCcurrentgain-hFE=20–70@IC=-4Adc ·Collector–emittersaturationvoltage-VCE(sat)=-1.1Vdc(Max)@IC=-4Adc APPLICATIONS ·Designedforgeneral–purposeswitchingandamplifierapplications. | SAVANTIC Savantic, Inc. | |||
TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeamplifierandswitchingapplications. Pinning 1=Base 2=Collector 3=Emitter | DCCOMDc Components 直流元件直流元件有限公司 | |||
ComplementarySiliconPlasticPowerTransistors 10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTORS(10A,60V,75W) COMPLEMENTARYSILICONPOWERTRANSISTORS. | MOSPEC MOSPEC | |||
10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. •DCCurrentGainSpecifiedto10Amperes •HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc | MotorolaMotorola, Inc 摩托罗拉 | |||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SILICONEPITAXIALPLANARTRANSISTOR GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
PNPPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER) GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
COMPLEMENTARYSILICONPOWERTRANSISTORS ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGETRANSISTOR HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE2955Tisdesignedforgeneralpurposeofamplifierandswitchingapplications. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
COMPLEMENTARYSILICONPOWERTRANSISTORS ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
ComplementarySiliconPlasticPowerTransistors 10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS−75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral−purposeamplifierandswitchingapplications. Features •DCCurrentGainSpecifiedto10A •HighCurrentGain−BandwidthProduct−fT=2.0MHz(Min | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PLASTICPOWERTRANSISTORS PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications | CDIL CDIL | |||
HighVoltagePowerTransistors 文件:66.32 Kbytes Page:4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconPNPtransistorinaTO-220PlasticPackage. 文件:882.29 Kbytes Page:6 Pages | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TO-220-PowerTransistorsandDarlingtons 文件:76.15 Kbytes Page:3 Pages | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:161.9 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
封装/外壳:TO-220-3 包装:散装 描述:TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SiliconNPNPowerTransistors 文件:94.24 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
HIGHVOLTAGETRANSISTOR 文件:161.9 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HighVoltagePowerTransistors 文件:66.32 Kbytes Page:4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HIGHVOLTAGETRANSISTOR 文件:168.92 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:168.92 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:161.9 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:161.9 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:168.92 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:161.9 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:168.92 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:161.9 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
HIGHVOLTAGETRANSISTOR 文件:168.92 Kbytes Page:4 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
INFRAREDICINTERNALINSPECTIONSYSTEM TheC2955isanICinternalinspectionsystemincorporatinganinfraredmicroscopeandaninfraredCCDcamera.UseofanewlydevelopedinfraredCCDcameraenablesahighsensitivityapproximatelytentimesthatofconventionalsystems(incomparisonsbyHAMAMATSU),atawavelengthof1.0µm,maki | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | |||
WireConnectors 文件:401.38 Kbytes Page:1 Pages | Heyco Heyco | |||
1500MHzCenterFrequency 文件:52.5 Kbytes Page:3 Pages | KRKR Electronics, Inc. KR Electronics, Inc. | |||
1500MHzBandpassFilter 文件:72.2 Kbytes Page:3 Pages | KRKR Electronics, Inc. KR Electronics, Inc. | |||
ADSLLINETRANSFORMER 文件:277.44 Kbytes Page:1 Pages | BOTHHAND Bothhand USA |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
1305+ |
TO-220 |
12000 |
公司特价原装现货 |
|||
长电 |
21+ |
TO-220- |
50000 |
原厂订货价格优势,可开13%的增值税票 |
|||
ON |
23+ |
TO220AB |
56000 |
||||
ST/意法半导体 |
22+ |
TO-220-3 |
6003 |
原装正品现货 可开增值税发票 |
|||
ST/意法 |
22+ |
TO-3 |
10000 |
绝对全新原装现货热卖 |
|||
ON |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
|||
MOTOROLA |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
FSC |
1022+ |
TO-220 |
2333 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
长电 |
22+23+ |
TO-220-3L |
24497 |
绝对原装正品全新进口深圳现货 |
|||
STM |
00+09 |
30 |
公司优势库存 热卖中! |
MJE2955规格书下载地址
MJE2955参数引脚图相关
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