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MJE2955晶体管资料
MJE2955别名：MJE2955三极管、MJE2955晶体管、MJE2955晶体三极管
MJE2955生产厂家：美国摩托罗拉半导体公司
MJE2955制作材料：Si-PNP
MJE2955性质：低频或音频放大 （LF）_功率放大 （L）
MJE2955封装形式：直插封装
MJE2955极限工作电压：70V
MJE2955最大电流允许值：10A
MJE2955最大工作频率：<1MHZ或未知
MJE2955引脚数：3
MJE2955最大耗散功率：90W
MJE2955放大倍数：
MJE2955图片代号：B-21
MJE2955vtest：70
MJE2955htest：999900
- MJE2955atest：10
MJE2955wtest：90
MJE2955代换 MJE2955用什么型号代替：BD208,BD214/80,BD608,
MJE2955价格
参考价格：￥1.6227
型号：MJE2955T 品牌：STMICROELECTRONICS 备注：这里有MJE2955多少钱，2025年最近7天走势，今日出价，今日竞价，MJE2955批发/采购报价，MJE2955行情走势销售排行榜，MJE2955报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE2955 | POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARY SILICON POWER TRANSISTORS. | MOSPEC 统懋 |   | |
MJE2955 | General Purpose and Switching Applications General Purpose and Switching Applications • DC Current Gain Specified to IC= 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MJE2955 | TO-220-3L Plastic-Encapsulate Transistors FEATURES General Purpose and Switching Applications | DGNJDZ 南晶电子 | | |
MJE2955 | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 文件：213.09 Kbytes Page：2 Pages | Motorola 摩托罗拉 | | |
MJE2955 | TO-220-3L Plastic-Encapsulate Transistors 文件：1.42493 Mbytes Page：3 Pages | JIANGSU 长电科技 | | |
MJE2955 | PNP Silicon Plastic-Encapsulate Transistor 文件：252.97 Kbytes Page：2 Pages | MCC 美微科 | | |
Complementary Silicon power transistors (10A / 60V / 75W) DESCRIPTION The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A. FEATURES ● Designed for general-purpose switching and amplifier applications. | NELLSEMI 尼尔半导体 | | ||
General Purpose Transistor Features - General Purpose and Switching Application | COMCHIP 典琦 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Power Transistors | Central | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications | CDIL | | ||
General Purpose and Switching Applications General Purpose and Switching Applications • DC Current Gain Specified to IC= 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. | TGS | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC= -4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistors MJE2955T DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC=-4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications. | SAVANTIC | | ||
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier andswitching applications. Pinning 1 = Base 2 = Collector 3 = Emitter | DCCOM | | ||
Complementary Silicon Plastic Power Transistors 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(10A,60V,75W) COMPLEMENTARY SILICON POWER TRANSISTORS. | MOSPEC 统懋 | | ||
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc | Motorola 摩托罗拉 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES | STMICROELECTRONICS 意法半导体 | | ||
SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose | WINGS 永盛电子 | | ||
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose | WINGS 永盛电子 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955Tis designed for general purpose of amplifier and switching applications. | UTC 友顺 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. | STMICROELECTRONICS 意法半导体 | | ||
Complementary Silicon Plastic Power Transistors 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min | ONSEMI 安森美半导体 | | ||
PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications | CDIL | | ||
封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Silicon PNP transistor in a TO-220 Plastic Package. 文件：882.29 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
TO-220 - Power Transistors and Darlingtons 文件：76.15 Kbytes Page：3 Pages | RECTRON | | ||
HIGH VOLTAGE TRANSISTOR 文件：161.9 Kbytes Page：4 Pages | UTC 友顺 | | ||
High Voltage Power Transistors 文件：66.32 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors 文件：94.24 Kbytes Page：3 Pages | SAVANTIC | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 文件：213.09 Kbytes Page：2 Pages | Motorola 摩托罗拉 | | ||
HIGH VOLTAGE TRANSISTOR 文件：161.9 Kbytes Page：4 Pages | UTC 友顺 | | ||
High Voltage Power Transistors 文件：66.32 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE TRANSISTOR 文件：168.92 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：168.92 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：161.9 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：161.9 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：168.92 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：161.9 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：168.92 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：168.92 Kbytes Page：4 Pages | UTC 友顺 | | ||
HIGH VOLTAGE TRANSISTOR 文件：161.9 Kbytes Page：4 Pages | UTC 友顺 | | ||
INFRARED IC INTERNAL INSPECTION SYSTEM The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conventional systems (in comparisons by HAMAMATSU), at a wavelength of 1.0 µm, maki | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | | ||
1500 MHz Center Frequency 文件：52.5 Kbytes Page：3 Pages | KR KR Electronics, Inc. | | ||
Wire Connectors 文件：401.38 Kbytes Page：1 Pages | HeycoHeyco. 海科 | | ||
1500 MHz Bandpass Filter 文件：72.2 Kbytes Page：3 Pages | KR KR Electronics, Inc. | | ||
ADSL LINE TRANSFORMER 文件：277.44 Kbytes Page：1 Pages | BOTHHAND | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
CJ/长电 |
24+ |
NA/ |
12477 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
23+ |
SOD-52 |
99000 |
全新原装假一赔十 |
|||
ST/意法 |
25+ |
TO-220 |
32000 |
ST/意法全新特价MJE2955即刻询购立享优惠#长期有货 |
|||
FAIRCHILD/仙童 |
24+ |
TO 220 |
155552 |
明嘉莱只做原装正品现货 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
4650 |
绝对原装公司现货 |
|||
FSC |
1022+ |
TO-220 |
2333 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC(友顺) |
24+/25+ |
TO-220 |
50 |
UTC原厂一级代理商,价格优势! |
|||
ON |
23+ |
TO220AB |
56000 |
||||
CJ/长电 |
21+ |
TO-220-3L |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
MJE2955规格书下载地址
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