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NTD2955G中文资料
NTD2955G数据手册规格书PDF详情
Power MOSFET −60 V, −12 A, P−Channel DPAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
NTD2955G产品属性
- 类型
描述
- 型号
NTD2955G
- 功能描述
MOSFET -60V -12A P-Channel
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
TO-252 |
20300 |
ONSEMI/安森美原装特价NTD2955G即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
24+ |
标准封装 |
12482 |
全新原装正品/价格优惠/质量保障 |
|||
ON |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
ON/安森美 |
17+ |
DPAK4LEADSINGLEGAUGE |
31518 |
原装正品 可含税交易 |
|||
ON(安森美) |
23+ |
12730 |
公司只做原装正品,假一赔十 |
||||
NK/南科功率 |
2025+ |
TO-252-2 |
3100 |
国产南科平替供应大量 |
|||
ON(安森美) |
2511 |
9850 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
||||
ON |
17+ |
TO-252 |
6200 |
||||
ON |
24+ |
45076 |
|||||
ON |
1651+ |
? |
7500 |
只做原装进口,假一罚十 |
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ONSEMI相关芯片制造商
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