位置:NTD2955G > NTD2955G详情

NTD2955G中文资料

厂家型号

NTD2955G

文件大小

124.5Kbytes

页面数量

8

功能描述

??0 V, ??2 A, P?묬hannel DPAK

MOSFET -60V -12A P-Channel

数据手册

下载地址一下载地址二到原厂下载

生产厂商

ONSEMI

NTD2955G数据手册规格书PDF详情

Power MOSFET −60 V, −12 A, P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.

Features

• Avalanche Energy Specified

• IDSS and VDS(on) Specified at Elevated Temperature

• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes

• NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

NTD2955G产品属性

  • 类型

    描述

  • 型号

    NTD2955G

  • 功能描述

    MOSFET -60V -12A P-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-24 18:56:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ONSEMI/安森美
25+
TO-252
20300
ONSEMI/安森美原装特价NTD2955G即刻询购立享优惠#长期有货
ON(安森美)
24+
标准封装
12482
全新原装正品/价格优惠/质量保障
ON
SOT-252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
ON/安森美
17+
DPAK4LEADSINGLEGAUGE
31518
原装正品 可含税交易
ON(安森美)
23+
12730
公司只做原装正品,假一赔十
NK/南科功率
2025+
TO-252-2
3100
国产南科平替供应大量
ON(安森美)
2511
9850
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
ON
17+
TO-252
6200
ON
24+
45076
ON
1651+
?
7500
只做原装进口,假一罚十