POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

PNP SILICON POWER TRANSISTOR

• Designed for Complementary Use with the TIP3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current • Customer-Specified Selections Available

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

COMPLEMENTARY SILICON POWER TRANSISTORS

NPN --> TIP3055 PNP --> TIP2955 Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ Gen

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

Audio Power Amplifier DC to DC Converter * High Current Capability * High Power Dissipation * Complematary to TIP3055

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type TIP3055 ·90 W at 25°C case temperature ·15 A continuous collector current APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP3055 • 90 W at 25°C case temperature • 15 A continuous collector current APPLICATIONS • Designed for general–purpose switching and amplifier applications.

Complementary Silicon High Power Ttransistors

PNP TIP2955 NPN TIP3055 DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-247 plastic package. It is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. The complementary PNP type is the TIP295

SILICON POWER TRANSISTORS

PNP TIP2955 NPN TIP3055 The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for power switching circuits, series and shunt regulators, output stage and hi-fi amplifiers. The complementary is the TIP2955 For PNP types Voltage and Curent are Negative. Compliance to

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@lc = -4A • Collector-Emitter Saturation Voltage- :VCE(sat)=-1.1V(Max)@lc = -4A • Complement to Type TIP3055 APPLICATIONS • Designed for general-purpose switching and amplifier applications.

Complementary Power Transistor

Description: Complementary Silicon Power Transistors are designed for use in general purpose power amplifier and switching applications. Features: • Power Dissipation-PD = 90W at TC = 25°C • • DC Current Gain hFE = 20 ~ 100 at IC = 4A • • VCE(sat) = 1.1V (Max.) at IC = 4A, IB = 400mA

互补硅功率晶体管

The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. • Low collector-emitter saturation voltage \n• Complementary NPN - PNP transistors;

音频功放晶体管

Transistor

Complementary power transistors

文件：88.42 Kbytes Page：7 Pages

封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 100V 15A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 15A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. The complementary PNP type is the TIP2955.

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

Complementary power transistors

文件：88.42 Kbytes Page：7 Pages

POWER TRANSISTORS

文件：69.59 Kbytes Page：3 Pages

isc Silicon PNP Power Transistor

文件：151.17 Kbytes Page：2 Pages

POWER TRANSISTORS(15A)

2N3055A(NPN) MJ15015(NPN) MJ2955A(PNP) NJ15016(PNP)

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

8-Bit Micro-controller

8-Bit Micro-controller with 16KB flash embedded

POWER TRANSISTORS(15A,50V,115W)

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