MJ2955晶体管资料

  • MJ2955别名:MJ2955三极管、MJ2955晶体管、MJ2955晶体三极管

  • MJ2955生产厂家:美国摩托罗拉半导体公司

  • MJ2955制作材料:Si-PNP

  • MJ2955性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • MJ2955封装形式:直插封装

  • MJ2955极限工作电压:60V

  • MJ2955最大电流允许值:15A

  • MJ2955最大工作频率:<1MHZ或未知

  • MJ2955引脚数:2

  • MJ2955最大耗散功率:150W

  • MJ2955放大倍数

  • MJ2955图片代号:E-44

  • MJ2955vtest:60

  • MJ2955htest:999900

  • MJ2955atest:15

  • MJ2955wtest:150

  • MJ2955代换 MJ2955用什么型号代替:BD250C,BD258/100,BD318,2N5879,2N6029,

MJ2955价格

参考价格:¥0.0000

型号:MJ2955 品牌:Florida Misc. 备注:这里有MJ2955多少钱,2025年最近7天走势,今日出价,今日竞价,MJ2955批发/采购报价,MJ2955行情走势销售排行榜,MJ2955报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJ2955

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

ONSEMI

安森美半导体

MJ2955

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

ONSEMI

安森美半导体

MJ2955

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 115 WATTS

boca

博卡

MJ2955

SILICON PLANAR POWER TRANSISTORS

General Purpose Switching and Amplifier Applications 2N3055 NPN MJ2955 PNP

CDIL

MJ2955

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 2N3055 (NPN) MJ2955(PNP) designed for general–purpose switching and amplifier applications. 1. DC Current Gain — hFE= 20 – 70 @ IC= 4 Adc 2. Collector–Emitter Saturation Voltage — VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

Motorola

摩托罗拉

MJ2955

Transistor, PNP TO-3

Description: Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features: • DC current gain - hFE = 20 - 70 at IC = 4A DC • Collector-emitter saturation voltage-VCE (sat) = 1.1V DC (max.) at IC = 4A DC • Excellent safe operating ar

MULTICOMP

易络盟

MJ2955

isc Silicon PNP Power Transistors

DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage-: VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055 APPLICATIONS ·Designed for general-purpose switching and amplifier applications

ISC

无锡固电

MJ2955

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC current gain -hFE = 20–70 @ IC = 4 Adc ·Excellent safe operating area APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

SAVANTIC

MJ2955

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER High Current Capability High Power Dissipation Complementary to MJ3055

WINGS

永盛电子

MJ2955

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audi

STMICROELECTRONICS

意法半导体

MJ2955

Complementary power transistors

文件:92.97 Kbytes Page:7 Pages

STMICROELECTRONICS

意法半导体

MJ2955

Trans GP BJT PNP 60V 15A 3-Pin(2+Tab) TO-3 Tray

ETC

知名厂家

MJ2955

音频功放晶体管

thundersoft

中科创达

MJ2955

Transistor

COMSET

MJ2955

Silicon NPN Power Transistors

文件:114.48 Kbytes Page:3 Pages

SAVANTIC

MJ2955

POWER TRANSISTORS(15A,50V,115W)

文件:167.54 Kbytes Page:3 Pages

MOSPEC

统懋

MJ2955

封装/外壳:TO-204AA,TO-3 包装:散装 描述:TRANS PNP 60V 15A TO3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

MJ2955

COMPLEMENTARY SILICON POWER TRANSISTORS

文件:493.29 Kbytes Page:2 Pages

Central

COMPLEMENTARY SILICON POWER TRANSISTORS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

ONSEMI

安森美半导体

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS

boca

博卡

POWER TRANSISTORS(15A)

2N3055A(NPN) MJ15015(NPN) MJ2955A(PNP) NJ15016(PNP)

MOSPEC

统懋

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d

Motorola

摩托罗拉

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N3055A ·Excellent safe operating area APPLICATIONS ·For high power audio ,stepping motor and other linear applications ·Relay or solenoid drviers ·DC-DC converters inverters

SAVANTIC

COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS

2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −VCE(sat

ONSEMI

安森美半导体

SILICON PLANAR POWER TRANSISTORS

General Purpose Switching and Amplifier Applications 2N3055 NPN MJ2955 PNP

CDIL

Silicon PNP Power Transistors

文件:256.04 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:143.38 Kbytes Page:4 Pages

SAVANTIC

封装/外壳:TO-204AA,TO-3 包装:管件 描述:TRANS PNP 60V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

INFRARED IC INTERNAL INSPECTION SYSTEM

The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conventional systems (in comparisons by HAMAMATSU), at a wavelength of 1.0 µm, maki

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Wire Connectors

文件:401.38 Kbytes Page:1 Pages

Heyco

1500 MHz Center Frequency

文件:52.5 Kbytes Page:3 Pages

KR

1500 MHz Bandpass Filter

文件:72.2 Kbytes Page:3 Pages

KR

ADSL LINE TRANSFORMER

文件:277.44 Kbytes Page:1 Pages

BOTHHAND

MJ2955产品属性

  • 类型

    描述

  • 型号

    MJ2955

  • 功能描述

    两极晶体管 - BJT PNP Power Switching

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-204
977
原厂订货渠道,支持BOM配单一站式服务
ON/安森美
24+
TO-3
10000
十年沉淀唯有原装
LY
NA
16355
一级代理 原装正品假一罚十价格优势长期供货
ST
23+
TO-3
65400
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
NEW
TO-3
18689
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ST
25+
TO-3
600
百分百原装正品 真实公司现货库存 本公司只做原装 可
LY
2022+
TO-3
8000
只做原装支持实单,有单必成。
MOT
25+
1
公司优势库存 热卖中!!
ST/意法
25+
TO-3
45000
ST/意法全新现货MJ2955即刻询购立享优惠#长期有排单订

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