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型号	功能描述	生产厂家企业	LOGO
NP90N04MDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04MUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.1mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04MUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04MUK	MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) ● Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V) ● Designed for automotive application	RENESAS 瑞萨	RENESAS
NP90N04MUK-S18-AY	MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) ● Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V) ● Designed for automotive application	RENESAS 瑞萨	RENESAS
NP90N04NDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04NUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.1mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04NUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04NUK-S18-AY	MOS FIELD EFFECT TRANSISTOR Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features ● Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) ● Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V) ● Designed for automotive application	RENESAS 瑞萨	RENESAS
NP90N04PDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04PUF	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04PUF	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04PUF is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel temperature 175°C rating • Super low on-state resistance RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss:	RENESAS 瑞萨	RENESAS
NP90N04PUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VDG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current ra	RENESAS 瑞萨	RENESAS
NP90N04VDG-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current ra	RENESAS 瑞萨	RENESAS
NP90N04VDG-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP90N04VDG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.0 mΩ MAX. (VGS = 10 V, ID = 45 A) RDS(on)2 = 8.6 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • High current ra	RENESAS 瑞萨	RENESAS
NP90N04VDK	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VDK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VDK-E1-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VDK-E2-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VLG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VLK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VLK	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3800 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VLK-E1-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3800 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VLK-E2-AY	40 V – 90 A – N-channel Power MOS FET Application: Automotive Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3800 pF TYP. (VDS = 25 V)  Logic level drive type  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP90N04VUG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 90A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP90N04VUK	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a	RENESAS 瑞萨	RENESAS
NP90N04VUK	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an	RENESAS 瑞萨	RENESAS
NP90N04VUK_V01	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an	RENESAS 瑞萨	RENESAS
NP90N04VUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an	RENESAS 瑞萨	RENESAS
NP90N04VUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a	RENESAS 瑞萨	RENESAS
NP90N04VUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, ID = 45 A)  Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)  Designed for automotive application an	RENESAS 瑞萨	RENESAS
NP90N04VUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A) • Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) • Designed for automotive application a	RENESAS 瑞萨	RENESAS
NP90N04MDH	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04MUG	SWITCHING N-CHANNEL POWER MOS FET 文件：328.12 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP90N04MUG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04MUG_15	SWITCHING N-CHANNEL POWER MOS FET 文件：328.12 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP90N04MUH	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04MUK	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP90N04MUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04MUK_15	MOS FIELD EFFECT TRANSISTOR 文件：123.91 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP90N04NDH	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04NUH	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04NUK	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04NUK	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP90N04PDH	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04PUF	Power MOSFETs-Power MOSFETs for Automotive	RENESAS 瑞萨	RENESAS
NP90N04PUF_15	SWITCHING N-CHANNEL POWER MOS FET 文件：274.25 Kbytes Page：9 Pages	RENESAS 瑞萨	RENESAS
NP90N04PUH	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04VDG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04VDK	N-Channel MOSFET uses advanced SGT technology 文件：2.30948 Mbytes Page：6 Pages	DOINGTER 杜因特	DOINGTER
NP90N04VDK_15	40 V ??90 A ??N-channel Power MOS FET Application: Automotive 文件：114.64 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP90N04VLG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04VLK_15	40 V ??90 A ??N-channel Power MOS FET Application: Automotive 文件：300.91 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUG	N-Channel MOSFET uses advanced trench technology 文件：1.32816 Mbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
NP90N04VUG	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUG_15	SWITCHING N-CHANNEL POWER MOS FET 文件：318.83 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
NP90N04VUG-E1-AYNote	SWITCHING N-CHANNEL POWER MOS FET 文件：318.83 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS

NP90N04产品属性

类型
描述
型号
NP90N04
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
MOS FIELD EFFECT TRANSISTOR

NP90N04供应商更多...

更新时间：2025-12-26 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金芯世纪电子有限公司	NP90N04VDK	RENESAS/瑞萨	22+	TO-252	100000	代理渠道/只做原装/可含税	询价
深圳市威雅利发展有限公司	NP90N04VDK-E1-AY	RENESAS	19+20+	TO-252	22500	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市润联芯城科技有限公司	NP90N04VDK-E1-AY	RENESAS/瑞萨	22+	TO-252	7500	原装正品支持实单	询价
深圳市科恒伟业电子有限公司	NP90N04VDK-E1-AY	RENESAS/瑞萨	24+	TO252	8540	只做原装正品现货或订货假一赔十!	询价
深圳市正纳电子有限公司	NP90N04VDK-E1-AY	Renesas(瑞萨)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市芯皇电子有限公司	NP90N04VDK	RENESAS/瑞萨	22+	TO-252	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市星辰微电科技有限公司	NP90N04VDK	RENESAS/瑞萨	22+	TO-252	12500	瑞萨全系列在售,终端可出样品	询价
贸泽芯城（深圳）电子科技有限公司	NP90N04VLG	-	23+	NA	33000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市中联芯电子有限公司	NP90N04VLK-E1-AY	RENESAS	24+	TO-252	9000	只做原装正品有挂有货假一赔十	询价
洪芯国际半导体（深圳）有限公司	NP90N04VLG	NEC	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价

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NP16N06QLK-E1-AY 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别分立半导体产品晶体管 - FET，MOSFET - 阵列制造商 Renesas Electronics America Inc 封装：8-PowerL
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NP90N04产品属性

NP90N04供应商更多...

NP90N04芯片相关品牌

NP90N04规格书下载地址

NP90N04参数引脚图相关

NP90N04数据表相关新闻

NOVATEK

NP16N06QLK-E1-AY 瑞智芯 只有原装

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DdatasheetPDF页码索引

NP16N06QLK-E1-AY 瑞智芯只有原装

NP90N04NUK-S18-AY 瑞智芯只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商