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型号	功能描述	生产厂家企业	LOGO
NP80N04CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04MDG	N-Channel 40-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies	VBSEMI 微碧半导体	VBSEMI
NP80N04MDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R	RENESAS 瑞萨	RENESAS
NP80N04MDG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R	RENESAS 瑞萨	RENESAS
NP80N04MDG-S18-AY	N-Channel 40-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies	VBSEMI 微碧半导体	VBSEMI
NP80N04MHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04MHE	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04MHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04MHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04MLG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX	RENESAS 瑞萨	RENESAS
NP80N04MLG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX	RENESAS 瑞萨	RENESAS
NP80N04MLG-S18-AY	N-Channel 40-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies	VBSEMI 微碧半导体	VBSEMI
NP80N04NDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R	RENESAS 瑞萨	RENESAS
NP80N04NDG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R	RENESAS 瑞萨	RENESAS
NP80N04NHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04NHE	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04NHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N04NHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF	NEC 瑞萨	NEC
NP80N04NLG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX	RENESAS 瑞萨	RENESAS
NP80N04NLG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX	RENESAS 瑞萨	RENESAS
NP80N04NUG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance - NP80N04NUG RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on	RENESAS 瑞萨	RENESAS
NP80N04NUG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance - NP80N04NUG RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on	RENESAS 瑞萨	RENESAS
NP80N04PDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R	RENESAS 瑞萨	RENESAS
NP80N04PDG-E1B-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R	RENESAS 瑞萨	RENESAS
NP80N04PDG-E2B-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R	RENESAS 瑞萨	RENESAS
NP80N04PLG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX	RENESAS 瑞萨	RENESAS
NP80N04PLG-E1B-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX	RENESAS 瑞萨	RENESAS
NP80N04PLG-E2B-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX	RENESAS 瑞萨	RENESAS
NP80N04PUG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance - NP80N04NUG RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on	RENESAS 瑞萨	RENESAS
NP80N04PUG-E1B-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance - NP80N04NUG RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on	RENESAS 瑞萨	RENESAS
NP80N04PUG-E2B-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance - NP80N04NUG RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on	RENESAS 瑞萨	RENESAS
NP80N04CHE	N-Channel 40-V (D-S) MOSFET 文件：968.7 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
NP80N04CHE-S12-AZNote1,	SWITCHING N-CHANNEL POWER MOS FET 文件：299.83 Kbytes Page：12 Pages	RENESAS 瑞萨	RENESAS
NP80N04DHE-S12-AYNote1,	SWITCHING N-CHANNEL POWER MOS FET 文件：299.83 Kbytes Page：12 Pages	RENESAS 瑞萨	RENESAS
NP80N04EHE_15	SWITCHING N-CHANNEL POWER MOS FET 文件：299.83 Kbytes Page：12 Pages	RENESAS 瑞萨	RENESAS
NP80N04EHE-E1-AYNote1,2	SWITCHING N-CHANNEL POWER MOS FET 文件：299.83 Kbytes Page：12 Pages	RENESAS 瑞萨	RENESAS
NP80N04EHE-E2-AYNote1,2	SWITCHING N-CHANNEL POWER MOS FET 文件：299.83 Kbytes Page：12 Pages	RENESAS 瑞萨	RENESAS
NP80N04KHE	Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
NP80N04KHE	N-Channel 40 V (D-S) MOSFET 文件：1.07393 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
NP80N04KHE-E1-AY	N-Channel 40 V (D-S) MOSFET 文件：1.07392 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
NP80N04KHE-E1-AYNote1	SWITCHING N-CHANNEL POWER MOS FET 文件：299.83 Kbytes Page：12 Pages	RENESAS 瑞萨	RENESAS

NP80N04产品属性

类型
描述
型号
NP80N04
制造商
NEC
制造商全称
NEC
功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP80N04供应商更多...

更新时间：2025-12-26 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	NP80N04KHE-E1-AY	NEC/RENESAS	24+	NA/	5650	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	NP80N04MLG-S18-AY	RENESAS(瑞萨)/IDT	24+	TO220	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市金芯世纪电子有限公司	NP80N04KHE-E1-AY	NEC	22+	SOT-263	100000	代理渠道/只做原装/可含税	询价
深圳市芯皇电子有限公司	NP80N04MDG	RENESAS/瑞萨	22+	TO-220	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市星辰微电科技有限公司	NP80N04MDG	RENESAS/瑞萨	22+	TO-220	12500	瑞萨全系列在售,终端可出样品	询价
贸泽芯城（深圳）电子科技有限公司	NP80N04MHE-S18-AY	RENESAS/瑞萨	23+		33000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市科恒伟业电子有限公司	NP80N04KHE-E1-AY	RENESAS/瑞萨	2450+	TO-263	6885	只做原装正品假一赔十为客户做到零风险!!	询价
洪芯国际半导体（深圳）有限公司	NP80N04MLG	NEC	25+	VQFN24	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市一线半导体有限公司	NP80N04MHE	NEC	24+	TO-220AB	8866		询价
艾睿（深圳）半导体有限公司	NP80N04KHE-E1-AY	NEC	2447	SOT-263	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

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深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：NP90N04NUK-S18-AY 类别分立半导体产品晶体管 - FET，MOSFET - 单个制造商 Renesas Electronics America Inc 包装：50 封装
2021-9-3
NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
2020-8-24
NPA1006假一罚十
只做原装正品，欢迎咨询。
2020-7-16
NPA-730B-005D
板机接口压力传感器
2019-9-10

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