位置：首页 > IC中文资料第9811页 > NP80N04PDG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP80N04PDG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R | RENESAS 瑞萨 |   | |
NP80N04PDG | N-Channel 40 V (D-S) MOSFET 文件：1.07376 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
NP80N04PDG | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
NP80N04PDG | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) R | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | |
NP80N04PDG产品属性
- 类型
描述
- 型号
NP80N04PDG
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
TO-263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
VBsemi |
21+ |
TO263 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
R |
TO263 |
22+ |
6000 |
十年配单,只做原装 |
|||
RENESAS |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
NEC |
24+ |
TO-220AB |
8866 |
||||
VBsemi |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
AP |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
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DdatasheetPDF页码索引
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