位置：首页 > IC中文资料第11711页 > NP80N04CHE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP80N04CHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 |   | |
NP80N04CHE | MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | |
NP80N04CHE | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
NP80N04CHE | N-Channel 40-V (D-S) MOSFET 文件：968.7 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：299.83 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM80N04Q uses advanced trench technology and design to provide excellent RDS(ON) with | ADV 爱德微 | | ||
N-Channel 4 -V (D-S) MOSFET 文件：1.26306 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：1.35541 Mbytes Page：4 Pages | JIANGSU 长电科技 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.45351 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-Channel Enhancement Mode Power MOSFET 文件：756.79 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | |
NP80N04CHE产品属性
- 类型
描述
- 型号
NP80N04CHE
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 80A I(D) | TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
R |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
23+24 |
TO-220 |
17170 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
|||
NEC |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
NEC |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
RENESAS/瑞萨 |
2450+ |
TO-263 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
|||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NEC |
25+ |
TO-220 |
2500 |
全新原装正品支持含税 |
|||
NEC |
24+ |
TO-220 |
60000 |
NP80N04CHE芯片相关品牌
NP80N04CHE规格书下载地址
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DdatasheetPDF页码索引
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