iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=6.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NDP06N60Z

文件：143.37 Kbytes Page：6 Pages

N-ChannelPowerMOSFET600V,1.2

文件：116.23 Kbytes Page：8 Pages

N-ChannelPowerMOSFET

文件：124.47 Kbytes Page：7 Pages

N-ChannelPowerMOSFET

文件：124.47 Kbytes Page：7 Pages

N-ChannelPowerMOSFET

文件：124.47 Kbytes Page：7 Pages

N-ChannelPowerMOSFET600V,1.2

文件：116.23 Kbytes Page：8 Pages

NDP06N60Z

文件：143.37 Kbytes Page：6 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 600V 7.1A TO-220FP 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-ChannelPowerMOSFET

文件：124.47 Kbytes Page：7 Pages

N-ChannelPowerMOSFET600V,1.2

文件：116.23 Kbytes Page：8 Pages

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

PowerfiledEffectTransistor

FEATURES ◆RobustHighVoltageTermination ◆AvalancheEnergySpecified ◆Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode ◆DiodeisCharacterizedforUseinBridgeCircuits ◆IDSSandVDS(on)SpecifiedatElevatedTemperature

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

文件：1.92413 Mbytes Page：16 Pages

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

文件：1.74081 Mbytes Page：16 Pages

POWERFIELDEFFECTTRANSISTOR

文件：191.5 Kbytes Page：6 Pages