位置：首页 > IC中文资料第5822页 > CMT06N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMT06N60 | POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic | CHAMP 虹冠电子 |   | |
CMT06N60 | POWER FIELD EFFECT TRANSISTOR 文件：246.73 Kbytes Page：6 Pages | CHAMP 虹冠电子 | | |
CMT06N60 | POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
CMT06N60 | POWER FIELD EFFECT TRANSISTOR | Champion 全鹏电子 | | |
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：246.73 Kbytes Page：6 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：246.73 Kbytes Page：6 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：246.73 Kbytes Page：6 Pages | CHAMP 虹冠电子 | | ||
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica | Fuji 富士通 | | ||
Power filed Effect Transistor FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature | JIANGSU 长电科技 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.92413 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.74081 Mbytes Page：16 Pages | Infineon 英飞凌 | |
CMT06N60产品属性
- 类型
描述
- 型号
CMT06N60
- 功能描述
POWER FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CMT |
24+ |
NA/ |
3264 |
原装现货,当天可交货,原型号开票 |
|||
CMT |
25+ |
TO-220 |
150 |
原装正品,假一罚十! |
|||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CMT |
25+23+ |
TO-220 |
27679 |
绝对原装正品全新进口深圳现货 |
|||
Coilcraft |
24+ |
SMT6 |
11016 |
公司现货库存,支持实单 |
|||
VBsemi |
24+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
CET |
25+ |
TO- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
CHAMPION |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
23+ |
TO- |
6000 |
原装正品，支持实单 |
CMT06N60芯片相关品牌
CMT06N60规格书下载地址
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CMT06N60数据表相关新闻
CMS-151103-088SP
CMS-151103-088SP
2024-3-13CMS79FT738
CMS79FT738
2024-1-8CMU1010-0000-000N0U0A30H
CMU1010-0000-000N0U0A30H
2021-6-24CMU1010-0000-000N0U0A40G
CMU1010-0000-000N0U0A40G
2021-6-24CMS69F116C
CMS69F116C，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一/零七五五，八五二七四六六二 ，企鹅:一一七四零五二三五三/一八五二三 四六九零六.V:八七六八零五五八.
2021-6-9CMT-9648-85T
CMT-9648-85T CPI-3014-90T CPI-3213-90PM CPI-4233-87T CPT-1404-85T CPI-4233-92T CPI-4232-72SST CPS-4242-100T CPS-4013-110T CPI-3816-95T SCE016LD3VC1S CPI-2212-85PM CPT-4011-85PM CPI-4232-92SST CPI-3119-90PM CMI-1295IC-0385T NBL45282H-A3 HCM1206BX SCE016LD2VC1S
2021-4-27
DdatasheetPDF页码索引
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