位置：首页 > IC中文资料第5822页 > CMT06N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMT06N60 | POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic | CHAMP 虹冠电子 |   | |
CMT06N60 | POWER FIELD EFFECT TRANSISTOR 文件：246.73 Kbytes Page：6 Pages | CHAMP 虹冠电子 | | |
CMT06N60 | POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
CMT06N60 | POWER FIELD EFFECT TRANSISTOR | CHAMPION 全鹏电子 | | |
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：246.73 Kbytes Page：6 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：246.73 Kbytes Page：6 Pages | CHAMP 虹冠电子 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：246.73 Kbytes Page：6 Pages | CHAMP 虹冠电子 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode •75 lower Eoffcompared to previous generation combined with low conduction losses •Short circuit withstand time – 10 µs •Designed for: Motor controls, Inverter •NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable beh | INFINEON 英飞凌 | | ||
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 文件：278.56 Kbytes Page：13 Pages | INFINEON 英飞凌 | | ||
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 文件：278.56 Kbytes Page：13 Pages | INFINEON 英飞凌 | |
CMT06N60产品属性
- 类型
描述
- 型号
CMT06N60
- 功能描述
POWER FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CMT |
25+23+ |
TO-220 |
27679 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
TO-252 |
300000 |
|||||
VBsemi |
25+ |
TO220 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
CHAMPION |
03+ |
SOP8 |
1005 |
全新 发货1-2天 |
|||
CNX |
2447 |
SOP-8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CHAMPION |
23+ |
原厂正规渠道 |
5000 |
专注配单,只做原装进口现货 |
|||
TAIWAN |
25+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
虹冠 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
CMT |
05+ |
1825 |
3200 |
全新、原装 |
CMT06N60规格书下载地址
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CMT06N60数据表相关新闻
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CMU1010-0000-000N0U0A40G
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CMS69F116C，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一/零七五五，八五二七四六六二 ，企鹅:一一七四零五二三五三/一八五二三 四六九零六.V:八七六八零五五八.
2021-6-9CMT-9648-85T
CMT-9648-85T CPI-3014-90T CPI-3213-90PM CPI-4233-87T CPT-1404-85T CPI-4233-92T CPI-4232-72SST CPS-4242-100T CPS-4013-110T CPI-3816-95T SCE016LD3VC1S CPI-2212-85PM CPT-4011-85PM CPI-4232-92SST CPI-3119-90PM CMI-1295IC-0385T NBL45282H-A3 HCM1206BX SCE016LD2VC1S
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DdatasheetPDF页码索引
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