型号 功能描述 生产厂家 企业 LOGO 操作
AIHD06N60R

IGBT with integrated diode in packages offering space saving advantage

文件:1.92413 Mbytes Page:16 Pages

Infineon

英飞凌

AIHD06N60R

汽车级IGBT

Infineon

英飞凌

汽车级IGBT

Infineon

英飞凌

IGBT with integrated diode in packages offering space saving advantage

文件:1.74081 Mbytes Page:16 Pages

Infineon

英飞凌

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Fuji

富士通

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

JIANGSU

长电科技

POWER FIELD EFFECT TRANSISTOR

文件:191.5 Kbytes Page:6 Pages

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更新时间:2025-9-27 8:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
TO-252-3-313
2669
原厂订货渠道,支持BOM配单一站式服务
Infineon/英飞凌
25
PG-TO252-3-313
6000
原装正品
Infineon Technologies
21+
PG-TO252-3-313
2500
100%进口原装!长期供应!绝对优势价格(诚信经营)!
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon/英飞凌
21+
PG-TO252-3-313
6820
只做原装,质量保证
Infineon/英飞凌
2023+
PG-TO252-3-313
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供
Infineon/英飞凌
24+
PG-TO252-3-313
25000
原装正品,假一赔十!
Infineon Technologies
25+
TO-252-3 DPak(2 引线 + 接片
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
Infineon/英飞凌
2021+
PG-TO252-3-313
9600
原装现货,欢迎询价

AIHD06N60R数据表相关新闻