型号 功能描述 生产厂家 企业 LOGO 操作
AIHD06N60R

IGBT with integrated diode in packages offering space saving advantage

文件:1.92413 Mbytes Page:16 Pages

Infineon

英飞凌

AIHD06N60R

汽车级IGBT

Infineon

英飞凌

汽车级IGBT

Infineon

英飞凌

IGBT with integrated diode in packages offering space saving advantage

文件:1.74081 Mbytes Page:16 Pages

Infineon

英飞凌

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Fuji

富士通

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

JIANGSU

长电科技

POWER FIELD EFFECT TRANSISTOR

文件:191.5 Kbytes Page:6 Pages

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更新时间:2026-1-4 12:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
24+
PG-TO252-3-313
25000
原装正品,假一赔十!
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon/英飞凌
24+
PG-TO252-3-313
6000
全新原装深圳仓库现货有单必成
Infineon/英飞凌
21+
PG-TO252-3-313
6820
只做原装,质量保证
24+
N/A
76000
一级代理-主营优势-实惠价格-不悔选择
Infineon/英飞凌
23+
PG-TO252-3-313
12700
买原装认准中赛美
Infineon(英飞凌)
2447
PG-TO252-3-313
115000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
Infineon Technologies
22+
TO2523
9000
原厂渠道,现货配单
Infineon/英飞凌
24+
PG-TO252-3-313
8000
只做原装,欢迎询价,量大价优
Infineon Technologies
25+
TO-252-3 DPak(2 引线 + 接片
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

AIHD06N60R数据表相关新闻