isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，600V，7.1A，1.2Ω，单 N 沟道，TO-220FP

NDP06N60Z

文件：143.37 Kbytes Page：6 Pages

N-Channel Power MOSFET 600 V, 1.2 

文件：116.23 Kbytes Page：8 Pages

N-Channel Power MOSFET

文件：124.47 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：124.47 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：124.47 Kbytes Page：7 Pages

N-Channel Power MOSFET 600 V, 1.2 

文件：116.23 Kbytes Page：8 Pages

NDP06N60Z

文件：143.37 Kbytes Page：6 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH 600V 7.1A TO-220FP 分立半导体产品 晶体管 - FET，MOSFET - 单个

N-Channel Power MOSFET

文件：124.47 Kbytes Page：7 Pages

N-Channel Power MOSFET 600 V, 1.2 

文件：116.23 Kbytes Page：8 Pages

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

IGBT with integrated diode in packages offering space saving advantage

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IGBT with integrated diode in packages offering space saving advantage

文件：1.74081 Mbytes Page：16 Pages

POWER FIELD EFFECT TRANSISTOR

文件：191.5 Kbytes Page：6 Pages