CIT SWITCH

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包装：散装 描述：KEY STYLE PB, SPST, MOM, BLACK E 开关 按钮开关

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2004Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =4A RDS(ON)

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =6A RDS(ON)

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2013J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = 20V,ID = 13A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2030 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2030U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2090K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =90A RDS(ON)

N and P-Channel Enhancement Mode Power MOSFET

Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =10A RDS(ON)

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P05J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -5A RDS(O

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P05Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -5A RDS(ON)

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-7A RDS(ON)

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P08J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -8A RDS(O

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P10J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -20V,ID = -10A RDS(ON)

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P85GU uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Load switch ● Battery protection General Features ● VDS =-20V,ID =-85A RDS(ON)

600V, 20A, Trench FS II

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

600V, 20A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

600V, 20A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

600V, 20A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

600V, 20A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

600V, 20A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

600V, 20A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

650V, 20A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

600V, 20A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

600V, 20A, Trench FS II

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2 A RDS(ON)

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2308X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE2309 uses advanced trench technology and design to provide excellent RDS(V6.0ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-1.6A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2312X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE2323 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -4.1A RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE25P60K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-50A RDS(ON)

1200V, 25A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

1200V, 25A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

1200V, 25A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

1200V, 25A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

1200V, 25A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

1200V, 25A, Trench FS II

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

1200V, 25A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

1200V, 25A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

1200V, 25A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

1200V, 25A, Trench FS II

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

1350V, 25A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat