Description

The NCE20NP1006S uses advanced trench technology to

provide excellent RDS(ON) and low gate charge . The

complementary MOSFETs may be used to form a level shifted

high side switch, and for a host of other applications.

General Features

● N-Channel

VDS = 20V,ID =10A

RDS(ON) < 14mΩ @ VGS=4.5V

RDS(ON) < 18mΩ @ VGS=2.5V

● P-Channel

VDS = -20V,ID = -6A

RDS(ON) < 45mΩ @ VGS=-4.5V

RDS(ON) < 60mΩ @ VGS=-2.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

● Pb free terminal plating

● RoHS compliant

● Halogen free

Application

● Power Management