P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

12-150V P-Channel Trench MOSFET

\n The NCE2301A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. \n• V DS = -15V,I D = -3.0A\nR DS(ON) < 70m? @ V GS =-2.5V\nR DS(ON) < 80m? @ V GS =-4.5V\n• High power and current handing capability\n• Lead free product is acquired\n• Surface mount package;

NCE P-Channel Enhancement Mode Power MOSFET

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P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P沟道 MOSFET

P沟道 MOSFET

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Reflective Photosensor

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PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

文件：324.91 Kbytes Page：22 Pages