Description

The NCE20P08J uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages .This device is suitable for use as a load switching

application and a wide variety of other applications.

General Features

● VDS = -20V,ID = -8A

RDS(ON) = 24.5mΩ @ VGS=-4.5V (Typ)

RDS(ON) = 31mΩ @ VGS=-2.5V (Typ)

● Advanced trench MOSFET process technology

● Ultra low on-resistance with low gate charge

Application

● PWM applications

● Load switch

● Battery charge in cellular handset