P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

12-150V P-Channel Trench MOSFET

\n The NCE2301B uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. \n• V DS = -20V,I D = -2.6A\nR DS(ON) < 160m? @ V GS =-2.5V\nR DS(ON) < 120m? @ V GS =-4.5V\n• High power and current handing capability\n• Lead free product is acquired\n• Surface mount package;

NCE P-Channel Enhancement Mode Power MOSFET

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Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Reflective Photosensor

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PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

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PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

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EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

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