| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：N600R65；N-Channel Super Junction MOSFET 文件：575.56 Kbytes Page：8 Pages | KODENSHI 可天士 |   | ||
丝印代码：N600R70；N-Channel Super Junction MOSFET 文件：575.44 Kbytes Page：8 Pages | KODENSHI 可天士 | | ||
N-channel MOSFET 600V, 1A, 9.3Ω Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±1.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 1A, 9.3Ω Description The N6001NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 9.3Ω MAX. (VGS = 10 V, ID = 0.5 A) • Low input capacitance Ciss = 215pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±1.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 2A, 4.4Ω Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 2A, 4.4Ω Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 2A, 4.4Ω Description The N6003NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 2A, 4.4Ω Description The N6003NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 4A, 2.0Ω Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±4.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 4A, 2.0Ω Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±4.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 6A, 1.2Ω Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 6A, 1.2Ω Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 8A, 0.75Ω Description The N6008NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 0.75Ω MAX. (VGS = 10 V, ID = 4.0 A) • Low input capacitance Ciss = 2145pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±8. | RENESAS 瑞萨 | | ||
N-channel MOSFET 600V, 8A, 0.75Ω Description The N6008NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 0.75Ω MAX. (VGS = 10 V, ID = 4.0 A) • Low input capacitance Ciss = 2145pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±8. | RENESAS 瑞萨 | | ||
Body cavity design provides additional clearance for component mounting 文件：816.87 Kbytes Page：1 Pages | ARIES | | ||
JACK COVERS 文件：30.33 Kbytes Page：1 Pages | SWITCH | | ||
600 Series Analog Capacitance Manometers 文件：740.37 Kbytes Page：16 Pages | MKS | | ||
3M??Scotch짰 Transparent Film Tape 600 文件：572.08 Kbytes Page：6 Pages | 3M | | ||
SLIDE SWITCHES - MINIATURE 文件：218.76 Kbytes Page：2 Pages | E-SWITCH | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JST/日压 |
2450+ |
- |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
JST |
ROHS |
56500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
JST |
2022+ |
15000 |
只做原装，可提供样品 |
||||
JST |
23+ |
NA |
60000 |
正规渠道,只有原装! |
|||
JST/日压 |
2508+ |
/ |
484664 |
一级代理，原装现货 |
|||
JST |
25+ |
Connector |
26500 |
原厂原装,价格优势 |
|||
JST |
23+ |
端子 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
JST/日压 |
22+ |
连接器 |
728922 |
代理-优势-原装-正品-现货*期货 |
|||
JST(日压) |
2021+ |
8000 |
原装现货，欢迎询价 |
||||
JST |
22+ |
NA |
25000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
N600芯片相关品牌
N600规格书下载地址
N600参数引脚图相关
- otl功率放大器
- opa642
- opa2604
- op37
- op07中文资料
- op07
- OLED显示屏
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- N6465B
- N6465A
- N6463B
- N6462A
- N6461A
- N6460B
- N6458A
- N6457A
- N6456A
- N-6-19
- N6171A
- N6158A
- N6156A
- N6155A
- N6153A
- N6152A
- N6141C
- N6141A
- N6111
- N60N04VDK
- N-60EPU12
- N-60EPU06
- N-60APU12
- N-60APU06
- N6-0314
- N6008NZ-S17-AY
- N6008NZ
- N6006NZ-S17-AY
- N6006NZ
- N6004NZ-S17-AY
- N6004NZ
- N6003NZ-S17-AY
- N6003NZ
- N6002NZ-S29-AY
- N6002NZ
- N-600-2
- N6001NZ-S29-AY
- N6001NZ
- N-6
- N5Y011
- N5Y010
- N5Y009
- N5Y008
- N5Y007
- N5Y006
- N5Y005
- N5Y004
- N5Y003
- N5Y002
- N-5-UVB
- N-5MG
- N5C090-60
- N5C090-50
- N5C060-55
- N5C060-45
- N-5-BK
- N-5B-BK
- N-5B-19
- N-59MG
- N-59M
- N5990A
- N5980A
- N5972A
- N5864
- N-57MG
- N-57M
- N5716
- N5607
- N5606
- N5601
- N55T10
- N55S064
- N55S016
N600数据表相关新闻
N531 TO94
N531 531 电机 电磁炉 LED 大功率IGBT驱动 SOT23-5/TO-94
2021-12-28N531 SOT23-5
N531 SOT23-5 TO94 电磁炉LED大功率 IGBT驱动MOS管 全新原装
2021-12-28N76E003AQ20
N76E003AQ20，当天发货0755-82732291全新原装现货或门市自取.
2020-9-10N51822QFAA
N51822QFAA，当天发货0755-82732291全新原装现货或门市自取.
2020-8-17N74F280AN，N74F30244N，N74F32D-T，
N74F280AN，N74F30244N，N74F32D-T，
2020-4-19N74LS27ML1，SN74LS273N，SN74LS273DW，SN74LS273H，SN74LS266N，SN74LS266D，SN74LS259MEL，SN74LS259ML1，SN74LS2600D，SN74LS259D，SN74LS257BMR1，SN74LS258BML1，SN74LS258BD，SN74LS256D，SN74LS256N
N74LS27ML1，SN74LS273N，SN74LS273DW，SN74LS273H，SN74LS266N，SN74LS266D，SN74LS259MEL，SN74LS259ML1，SN74LS2600D，SN74LS259D，SN74LS257BMR1，SN74LS258BML1，SN74LS258BD，SN74LS256D，SN74LS256N
2019-12-13
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
