N-channel MOSFET 600V, 2A, 4.4Ω

Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0

N-channel MOSFET 600V, 2A, 4.4Ω

Description The N6002NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.4Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low input capacitance Ciss = 400pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±2.0

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