N-channel MOSFET 600V, 4A, 2.0Ω

Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±4.0

N-channel MOSFET 600V, 4A, 2.0Ω

Description The N6004NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 2.0Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low input capacitance Ciss = 900pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±4.0

PLUGS AND JACKS

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THE BREAD BOARDING MEDIUM FOR SURFACE MOUNT

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I2C BUS 2K/4K/16K BIT SERIAL CMOS EEPROM

General Description The AK6002A/04A/08A is a 2048/4096/16384-bit serial CMOS EEPROM divided into 256/512/2048 registers of 8 bits each. The AK6002A/04A/08A can operate full function under wide operating voltage range from 1.8V to 5.5V. The charge up circuit is integrated for high voltage generati

TEST TIPS AND PLUGS

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3M??Reusable Respirators

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