N-channel MOSFET 600V, 8A, 0.75Ω

Description The N6008NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 0.75Ω MAX. (VGS = 10 V, ID = 4.0 A) • Low input capacitance Ciss = 2145pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±8.

N-channel MOSFET 600V, 8A, 0.75Ω

Description The N6008NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 0.75Ω MAX. (VGS = 10 V, ID = 4.0 A) • Low input capacitance Ciss = 2145pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±8.

32-Channel 짹40V Liquid Crystal Display Row Driver

General Description Not recommended for new designs. The HV60 is a 32-channel liquid crystal display driver with 3-state DMOS outputs. Each output can be set to +40V, -40V, or GND. A symmetric waveform can be applied to a capacitive load using the phase shift feature of the HV60. Features ❏ Sy

32-Channel 짹40V Liquid Crystal Display Row Driver

General Description Not recommended for new designs. The HV60 is a 32-channel liquid crystal display driver with 3-state DMOS outputs. Each output can be set to +40V, -40V, or GND. A symmetric waveform can be applied to a capacitive load using the phase shift feature of the HV60. Features ❏ Sy

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga