GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source ampl

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source ampl

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source ampl

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz • Low Noise Figure NF =

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. Features • Silicon NPN, High Frequency Transistor • High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz • Low Noise Figure: NF = 2.5 dB (typ) @ f =

880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for lar

880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for lar

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：366.15 Kbytes Page：12 Pages

GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFET

880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET

封装/外壳：NI-860 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-860 分立半导体产品 晶体管 - FET，MOSFET - 射频

FET RF 65V 880MHZ NI-860

RF Power Field Effect Transistors

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RF Power Field Effect Transistors

文件：557.39 Kbytes Page：12 Pages

RF Power Field Effect Transistors

文件：557.39 Kbytes Page：12 Pages

RF POWER FIELD EFFECT TRANSISTORS

文件：408.7 Kbytes Page：12 Pages

RF POWER FIELD EFFECT TRANSISTORS

文件：408.7 Kbytes Page：12 Pages

封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER FIELD EFFECT TRANSISTORS

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LOW NOISE HIGH FREQUENCY TRANSISTOR

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