GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source ampl

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source ampl

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source ampl

900 MHz, 110 W, 26 V, GSM/EDGE Lateral N-Channel RF Power MOSFETs

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：366.15 Kbytes Page：12 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：366.15 Kbytes Page：12 Pages

GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFET

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Dual-Core Intel Itanium Processor

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