880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for lar

880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for lar

封装/外壳：NI-1230 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-1230 分立半导体产品 晶体管 - FET，MOSFET - 射频

FET RF 65V 880MHZ NI-1230

封装/外壳：NI-1230 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-1230 分立半导体产品 晶体管 - FET，MOSFET - 射频

880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET

880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET

Audio Cable, #26-1pr, TC, O/A Foil, CM

Product Description Audio Cable, 110 Ohm, 26 AWG stranded (7x34) .018” TC conductors, Datalene® insulation, twisted pair, Beldfoil® shield (100 coverage), 26 AWG stranded TC drain wire, PVC jacket.

Countersunk Type H Rivets

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Customer Specification

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Countersunk Type H Rivets

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Dual,300mA Ultra-low Noise

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