RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. Features • Silicon NPN, high Frequency, To-72 packaged, Transistor • High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz • Low Noise Figure NF =

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching applications. Features • Silicon NPN, High Frequency Transistor • High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz • Low Noise Figure: NF = 2.5 dB (typ) @ f =

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Trans GP BJT NPN 12V 0.04A 4-Pin TO-72

SB® 350 Connector

FEATURES • Mechanical keyed housings Prevents accidental mating of components operating at different voltage levels • Single-piece housing and unitized construction Provides industrial quality and durability • Genderless design Makes assembly quick and easy and reduces number of parts sto

SB® 350 Connectors Up to 500 Amps

The SB® 350 is the largest connector in the series with power capabilities up to 500 amps with a 350 mcm wire. Wires ranging from 1/0 to 350 mcm (53.5 to 185 mm²) fit into the one piece housing available in standard PC or a chemical resistant PBT/PC blend. Silver plated wire or busbar contact

SB® 350 Connectors Up to 500 Amps

The SB® 350 is the largest connector in the series with power capabilities up to 500 amps with a 350 mcm wire. Wires ranging from 1/0 to 350 mcm (53.5 to 185 mm²) fit into the one piece housing available in standard PC or a chemical resistant PBT/PC blend. Silver plated wire or busbar contact

M12?륚 Plastic Passive I/O Box

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ATG Gold Adhesive Transfer Tape

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