RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET

封装/外壳：NI-860 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-860 分立半导体产品 晶体管 - FET，MOSFET - 射频