880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for lar

880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET

AM Receiver IC

DESCRIPTION The MAS9180 AM-Receiver chip is a highly sensitive, simple to use AM receiver specially intended to receive time signals in the frequency range from 40 kHz to 100 kHz. Only a few external components are required for time signal receiver. The circuit has preamplifier, wide range automa

VSC9180 Arapahoe - 2.5G SONET/SDH Backplane Transceiver

GENERAL DESCRIPTION The VSC9180 is a multi-rate SONET/SDH transceiver with support for working and protection hitless backplane 1+1 protection. It is designed to serialize four STS-12/STM-4 signals, or byte interleaved SONET/SDH data from 4-bit 622MHz or 16-bit 155MHz parallel buses onto redundan

400Mbps, Low-Jitter, Low-Noise LVDS Repeater in an SC70 Package

文件：246.43 Kbytes Page：9 Pages

400Mbps, Low-Jitter, Low-Noise LVDS Repeater in an SC70 Package

文件：246.43 Kbytes Page：9 Pages