RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

封装/外壳：NI-860 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-860 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-860 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-860 分立半导体产品 晶体管 - FET，MOSFET - 射频

FET RF 65V 880MHZ NI-860

880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET

880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET

INSTRUMENTATION HANDLES

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Mounting brackets

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Programmable DC Power Supplies

文件：800.12 Kbytes Page：3 Pages

40A200V N-CHANNEL MOSFET

文件：441.69 Kbytes Page：8 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：68.73 Kbytes Page：5 Pages