RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

封装/外壳：NI-860 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-860 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：NI-860 包装：卷带（TR） 描述：FET RF 65V 880MHZ NI-860 分立半导体产品 晶体管 - FET，MOSFET - 射频

INSTRUMENTATION HANDLES

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Programmable DC Power Supplies

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40A200V N-CHANNEL MOSFET

文件：441.69 Kbytes Page：8 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：68.73 Kbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：68.73 Kbytes Page：5 Pages