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MMBT4126晶体管资料
MMBT4126别名:MMBT4126三极管、MMBT4126晶体管、MMBT4126晶体三极管
MMBT4126生产厂家:韩国三星公司
MMBT4126制作材料:
MMBT4126性质:射频/高频放大 (HF)_宽频带放大 (A)
MMBT4126封装形式:
MMBT4126极限工作电压:
MMBT4126最大电流允许值:0.2A
MMBT4126最大工作频率:<1MHZ或未知
MMBT4126引脚数:
MMBT4126最大耗散功率:
MMBT4126放大倍数:
MMBT4126图片代号:NO
MMBT4126vtest:0
MMBT4126htest:999900
- MMBT4126atest:.2
MMBT4126wtest:0
MMBT4126代换 MMBT4126用什么型号代替:
MMBT4126价格
参考价格:¥0.1236
型号:MMBT4126 品牌:FAIRCHILD 备注:这里有MMBT4126多少钱,2024年最近7天走势,今日出价,今日竞价,MMBT4126批发/采购报价,MMBT4126行情走势销售排行榜,MMBT4126报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MMBT4126 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypeAvailable(MMBT4124) ●IdealforMediumPowerAmplificationandSwitching | TRSYS Transys Electronics | ||
MMBT4126 | PNP(GENERALPURPOSETRANSISTOR) GENERALPURPOSETRANSISTOR | SamsungSamsung Group 三星三星半导体 | ||
MMBT4126 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(MMBT4124) •IdealforLowPowerAmplificationandSwitching •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes2and4) | DIODESDiodes Incorporated 达尔科技 | ||
MMBT4126 | PNPGeneralPurposeAmplifier PNPGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcollectorcurrentsto10µAasaswitchandto100mAasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT4126 | 25VPNPSMALLSIGNALTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •ComplementaryNPNType:MMBT4124 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHig | DIODESDiodes Incorporated 达尔科技 | ||
MMBT4126 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:118.96 Kbytes Page:3 Pages | DIODESDiodes Incorporated 达尔科技 | ||
MMBT4126 | PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:160.58 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | ||
MMBT4126 | PNPGeneralPurposeAmplifier 文件:83.08 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT4126 | FAIRCHILDSmallSignalTransistors 文件:628.43 Kbytes Page:1 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT4126 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 25V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
25VPNPSMALLSIGNALTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •ComplementaryNPNType:MMBT4124 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHig | DIODESDiodes Incorporated 达尔科技 | |||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(MMBT4124) •IdealforLowPowerAmplificationandSwitching •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes2and4) | DIODESDiodes Incorporated 达尔科技 | |||
25VPNPSMALLSIGNALTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •ComplementaryNPNType:MMBT4124 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHig | DIODESDiodes Incorporated 达尔科技 | |||
GeneralPurposeTransistorPNPSilicon GeneralPurposeTransistor PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistor GeneralPurposeTransistor PNPSilicon Features •MoistureSensitivityLevel:1 •ESDRating:−HumanBodyModel:>4000V −MachineModel:>400V •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:160.58 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:118.96 Kbytes Page:3 Pages | DIODESDiodes Incorporated 达尔科技 | |||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:118.96 Kbytes Page:3 Pages | DIODESDiodes Incorporated 达尔科技 | |||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:160.58 Kbytes Page:4 Pages | DIODESDiodes Incorporated 达尔科技 | |||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:118.96 Kbytes Page:3 Pages | DIODESDiodes Incorporated 达尔科技 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS PNP 25V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | PAMDiodes Incorporated 龙鼎威 | |||
GeneralPurposeTransistor 文件:128.199 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistor 文件:128.199 Kbytes Page:5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
HighLinearityQuadMOSFETMixerforDCS1800BTS ProductDescription ThePE4126isahighlinearity,passiveQuadMOSFETMixerforDCS1800BaseStationReceiversexhibitinghighdynamicrangeperformanceoverabroadLOdriverangeupto20dBm.Thismixerintegratespassivematchingnetworkstoprovidesingle-endedinterfacesfortheRFandL | Peregrine Peregrine Semiconductor | |||
HIGHFREQUENCYSWITCHINGTRANSISTORSFORBALLASTERS DESCRIPTION UTC4126isdesignedforspeciallyusedforelectronicballastersin110VACenvironment. FEATURES *Triplediffusedtechnology. *Highswitchingspeed | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
MIDDLINGVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION TheUTC4126DisamiddlingvoltageNPNpowertransistor.itusesUTC’sadvancedtechnologytoprovidecustomerswithhighswitchingspeedandhighreliability,etc. TheUTC4126Dissuitableforcommonlypoweramplifiercircuit,electronicballastsandenergy-savinglightetc. FEAT | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
MIDDLINGVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR FEATURES •Middlingbreakdownvoltage •Highcurrentcapability •Highswitchingspeed •Highreliability •RoHSproduct APPLICATIONS •Energy-savingligh •Electronicballasts •Electronictransformer •Commonlypoweramplifiercircuit | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | |||
NylonWireHarnessClamps 文件:109.24 Kbytes Page:1 Pages | Heyco Heyco |
MMBT4126产品属性
- 类型
描述
- 型号
MMBT4126
- 功能描述
两极晶体管 - BJT PNP Transistor General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
SOT23 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
FAIRCHILD |
1305+ |
12000 |
|||||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Fairchild |
2020+ |
原厂封装 |
35000 |
100%进口原装正品公司现货库存 |
|||
onsemi(安森美) |
23+ |
SOT-23-3 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Fairchild/Fairchild Semiconduc |
21+ |
SOT23 |
153000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
23+ |
NA/ |
153000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD |
23+ |
SOT23 |
6000 |
原装正品假一罚百!可开增票! |
|||
原装SK |
2023+ |
SOT-23 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
MMBT4126规格书下载地址
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晶体管类型:NPN 电流-集电极(Ic)(最大值):600mA 电压-集射极击穿(最大值):40V 不同?Ib,Ic时的?Vce饱和值(最大值):750mV@50mA,500mA 不同?Ic,Vce?时的DC电流增益(hFE)(最小值):100@150mA,1V 功率-最大值:300mW 频率-跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC
2020-9-3MMBT3906LT1G
晶体管类型:PNP 电流-集电极(Ic)(最大值):200mA 电压-集射极击穿(最大值):40V 不同?Ib,Ic时的?Vce饱和值(最大值):400mV@5mA,50mA 不同?Ic,Vce?时的DC电流增益(hFE)(最小值):100@10mA,1V 功率-最大值:300mW 频率-跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59
2020-9-3
DdatasheetPDF页码索引
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