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MMBT4126晶体管资料
MMBT4126别名:MMBT4126三极管、MMBT4126晶体管、MMBT4126晶体三极管
MMBT4126生产厂家:韩国三星公司
MMBT4126制作材料:
MMBT4126性质:射频/高频放大 (HF)_宽频带放大 (A)
MMBT4126封装形式:
MMBT4126极限工作电压:
MMBT4126最大电流允许值:0.2A
MMBT4126最大工作频率:<1MHZ或未知
MMBT4126引脚数:
MMBT4126最大耗散功率:
MMBT4126放大倍数:
MMBT4126图片代号:NO
MMBT4126vtest:0
MMBT4126htest:999900
- MMBT4126atest:0.2
MMBT4126wtest:0
MMBT4126代换 MMBT4126用什么型号代替:
MMBT4126价格
参考价格:¥0.1236
型号:MMBT4126 品牌:FAIRCHILD 备注:这里有MMBT4126多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT4126批发/采购报价,MMBT4126行情走势销售排行榜,MMBT4126报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
MMBT4126 | PNP General Purpose Amplifier PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to 100 mA as an amplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT4126 | PNP (GENERAL PURPOSE TRANSISTOR) GENERAL PURPOSE TRANSISTOR | Samsung 三星 | ||
MMBT4126 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMBT4124) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2 and 4) | DIODES 美台半导体 | ||
MMBT4126 | 25V PNP SMALL SIGNAL TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT4124 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | ||
MMBT4126 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features ● Epitaxial Planar Die Construction ● Complementary NPN Type Available (MMBT4124) ● Ideal for Medium Power Amplification and Switching | TRSYS Transys Electronics | ||
MMBT4126 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 25V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
MMBT4126 | MMBT4126: PNP General Purpose Amplifier | ONSEMI 安森美半导体 | ||
MMBT4126 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:118.96 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
MMBT4126 | PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:160.58 Kbytes Page:4 Pages | DIODES 美台半导体 | ||
MMBT4126 | PNP General Purpose Amplifier 文件:83.08 Kbytes Page:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT4126 | FAIRCHILD Small Signal Transistors 文件:628.43 Kbytes Page:1 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
25V PNP SMALL SIGNAL TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT4124 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | |||
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (MMBT4124) • Ideal for Low Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 2 and 4) | DIODES 美台半导体 | |||
25V PNP SMALL SIGNAL TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT4124 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | |||
General Purpose Transistor PNP Silicon General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V | ONSEMI 安森美半导体 | |||
General Purpose Transistor General Purpose Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: − Human Body Model: > 4000 V − Machine Model: > 400 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:160.58 Kbytes Page:4 Pages | DIODES 美台半导体 | |||
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:118.96 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:118.96 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:160.58 Kbytes Page:4 Pages | DIODES 美台半导体 | |||
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:118.96 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS PNP 25V 0.2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | DIODES 美台半导体 | |||
PNP 双极晶体管 | ONSEMI 安森美半导体 | |||
General Purpose Transistor 文件:128.199 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
General Purpose Transistor 文件:128.199 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
双极晶体管 - 双极结型晶体管(BJT) SS GP XSTR PNP 20V | ONSEMI 安森美半导体 | |||
High Linearity Quad MOSFET Mixer for DCS 1800 BTS Product Description The PE4126 is a high linearity, passive Quad MOSFET Mixer for DCS 1800 Base Station Receivers exhibiting high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and L | Peregrine | |||
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed | UTC 友顺 | |||
MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTC’s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4126D is suitable for commonly power amplifier circuit, electronic ballasts and energy-saving light etc. FEAT | UTC 友顺 | |||
Nylon Wire Harness Clamps 文件:109.24 Kbytes Page:1 Pages | Heyco | |||
Nylon Wire Harness Clamps 文件:109.24 Kbytes Page:1 Pages | Heyco |
MMBT4126产品属性
- 类型
描述
- 型号
MMBT4126
- 功能描述
两极晶体管 - BJT PNP Transistor General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-23-3 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
153000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON/安森美 |
24+ |
SOT23 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
25+ |
SOT23 |
37289 |
ON/安森美全新特价MMBT4126LT1G即刻询购立享优惠#长期有货 |
|||
FAIRCHILD |
23+ |
SOT23 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
FAIRCHILD/仙童 |
2450+ |
SOT-23 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
ON/安森美 |
24+ |
SOT23 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
25+ |
57000 |
原厂原装,价格优势 |
MMBT4126规格书下载地址
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晶体管类型:NPN 电流 - 集电极(Ic)(最大值):600mA 电压 - 集射极击穿(最大值):40V 不同?Ib,Ic 时的?Vce 饱和值(最大值):750mV @ 50mA,500mA 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):100 @ 150mA,1V 功率 - 最大值:300mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC
2020-9-3MMBT3906LT1G
晶体管类型:PNP 电流 - 集电极(Ic)(最大值):200mA 电压 - 集射极击穿(最大值):40V 不同?Ib,Ic 时的?Vce 饱和值(最大值):400mV @ 5mA,50mA 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):100 @ 10mA,1V 功率 - 最大值:300mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59
2020-9-3
DdatasheetPDF页码索引
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