Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast

POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS

SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer th

POWER TRANSISTOR

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R

POWER TRANSISTORS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir

POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

POWER TRANSISTOR

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D

NPN Bipolar Power Transistor For Switching Power Supply Applications

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D

POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS

POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. This high voltage/high speed transistors offer the following: • Improved Ef

POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS

The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features

POWER TRANSISTORS

The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features:

NPN Bipolar Power Transistor For Switching Power Supply Applications

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed • Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic

POWER TRANSISTOR

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors o

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- :V(BR)CBO=1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors

NPN Bipolar Power Transistor For Switching Power Supply Applications

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

POWER TRANSISTOR

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base

POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS

SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors of

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

NPN Bipolar Power Transistor For Switching Power Supply Applications

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base

Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- :V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

NPN Bipolar Power Transistor For Switching Power Supply Applications

SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base

POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS

The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light ballast”). These high voltage/high speed transistors exhibit the following main features: • Improved Efficiency Due to Low Base Drive

POWER TRANSISTORS

The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated SWITCHMODE Power supplies and electronic ballast (“light ballast”). These high voltage/high speed transistors exhibit the following main features: • Improved Efficiency Due to Low Base Drive

Silicon NPN Power Transistors

文件：103 Kbytes Page：3 Pages

POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

SWITCHMODE\u0002 NPN Bipolar Power Transistor For Switching Power Supply Applications

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 450V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

5.0 A, 1000 V NPN Bipolar Power Transistor

Silicon NPN Power Transistors

文件：103.36 Kbytes Page：3 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 450V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Switch-mode NPN Bipolar Power Transistor

文件：151.19 Kbytes Page：11 Pages

Switch-mode NPN Bipolar Power Transistor

文件：151.19 Kbytes Page：11 Pages

Switch-mode NPN Bipolar Power Transistor

文件：151.19 Kbytes Page：11 Pages

Silicon NPN Power Transistors

文件：103.08 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：100.56 Kbytes Page：3 Pages

Switch-mode NPN Bipolar Power Transistor

文件：145.27 Kbytes Page：10 Pages

Silicon NPN Power Transistors

文件：102.73 Kbytes Page：3 Pages

Switch-mode NPN Bipolar Power Transistor

文件：145.27 Kbytes Page：10 Pages

Silicon NPN Power Transistors

文件：100.04 Kbytes Page：3 Pages

Switch-mode NPN Bipolar Power Transistor

文件：145.27 Kbytes Page：10 Pages

Single, Dual, Triple Output DC/DC Converter

DESCRIPTIONS The 1800 series of 16W DC/DC converter modules combine innovative design techniques, conservative component selection and stringent test standards to achieve very high levels of reliability, performance and power density. Per MIL-HDBK-217F, that MTBF is >600,000 hours (+25oC Ground B

Axial Lead Inductors

DESCRIPTION The 1800 Series of inductors are particularly suited to use with a wide variety of switching regulators. Offering high current handling with a low mounting height, the devices are ideal where space is at a premium. FEATURES ■ Axial Format ■ Up to 5.35A IDC ■ 4.7µH to 10mH ■ Low D

WILMAR??Protective Relays - 1800 Series

Function: 25 • ANSI/IEEE C37.90-1978 • UL file No. E58048 • CSA file No. LR61158 Application: These relays are designed for automatic paralleling (synchronizing) of generators. The relays sense the phase angle displacement and the amplitude difference between two voltages and permit parall

SMOKE DETECTORS

[BRK ELECTRONICS]

Axial Lead Inductors

文件：87.73 Kbytes Page：2 Pages