MJD44H晶体管资料

  • MJD44H11别名:MJD44H11三极管、MJD44H11晶体管、MJD44H11晶体三极管

  • MJD44H11生产厂家:韩国三星公司

  • MJD44H11制作材料

  • MJD44H11性质:低频或音频放大 (LF)_功率放大 (PA)

  • MJD44H11封装形式:贴片封装

  • MJD44H11极限工作电压

  • MJD44H11最大电流允许值:8A

  • MJD44H11最大工作频率:<1MHZ或未知

  • MJD44H11引脚数:3

  • MJD44H11最大耗散功率:20W

  • MJD44H11放大倍数

  • MJD44H11图片代号:G-217

  • MJD44H11vtest:0

  • MJD44H11htest:999900

  • MJD44H11atest:8

  • MJD44H11wtest:20

  • MJD44H11代换 MJD44H11用什么型号代替

MJD44H价格

参考价格:¥1.4379

型号:MJD44H11-1G 品牌:ONSemi 备注:这里有MJD44H多少钱,2025年最近7天走势,今日出价,今日竞价,MJD44H批发/采购报价,MJD44H行情走势销售排行榜,MJD44H报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularMJE44H •FastSwitchingSpeeds

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Complementary Power Transistors

Features LeadFormedforSurfaceMountApplicationsinPlasticSleeves FastSwitchingSpeeds ComplementaryPairsSimplifiesDesigns Pb-FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

80 V, 8 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Ele

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

isc Silicon NPN Power Transistors

DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=1.0V(Max)@IC=8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD45H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinappl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Gate Driver

Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan

POWEREX

Powerex Power Semiconductors

POWEREX

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

isc Silicon NPN Power Transistors

DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=1.0V(Max)@IC=8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD45H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinappl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

80 V, 8 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11A 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •El

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary power transistors

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Designed for general purpose power and switching

文件:302.13 Kbytes Page:2 Pages

RECTRON

Rectron Semiconductor

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文件:217.1 Kbytes Page:8 Pages

STMICROELECTRONICSSTMicroelectronics

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STMICROELECTRONICS

Complementary Power Transistors

文件:114.33 Kbytes Page:8 Pages

ONSEMION Semiconductor

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文件:97.32 Kbytes Page:9 Pages

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文件:132.35 Kbytes Page:8 Pages

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文件:262.95 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

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ISC

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文件:152.94 Kbytes Page:5 Pages

STMICROELECTRONICSSTMicroelectronics

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文件:76.24 Kbytes Page:7 Pages

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ONSEMI

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文件:152.94 Kbytes Page:5 Pages

STMICROELECTRONICSSTMicroelectronics

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STMICROELECTRONICS

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文件:76.24 Kbytes Page:7 Pages

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ONSEMI

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文件:217.1 Kbytes Page:8 Pages

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NPN Epitaxial Silicon Transistor

文件:118.83 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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文件:114.33 Kbytes Page:8 Pages

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文件:97.32 Kbytes Page:9 Pages

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ONSEMI

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文件:76.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

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ONSEMI

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文件:76.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

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ONSEMI

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文件:97.32 Kbytes Page:9 Pages

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ONSEMI

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 80V 8A IPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

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封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 80V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

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文件:76.24 Kbytes Page:7 Pages

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ONSEMI

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ONSEMI

Designed for general purpose power and switching

文件:302.13 Kbytes Page:2 Pages

RECTRON

Rectron Semiconductor

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Complementary Power Transistors

文件:76.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

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ONSEMI

Complementary Power Transistors

文件:76.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

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ONSEMI

Complementary Power Transistors

文件:114.33 Kbytes Page:8 Pages

ONSEMION Semiconductor

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ONSEMI

Complementary Power Transistors

文件:97.32 Kbytes Page:9 Pages

ONSEMION Semiconductor

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ONSEMI

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文件:76.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

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MJD44H产品属性

  • 类型

    描述

  • 型号

    MJD44H

  • 功能描述

    两极晶体管 - BJT 8A 80V 20W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-7-27 21:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
TO-252-3
32350
深圳存库原装现货
ON
2450+
TO-252
6541
只做原装正品假一赔十为客户做到零风险!!
ST/意法
24+
TO-252
504574
免费送样原盒原包现货一手渠道联系
ON
25+
SMD
518000
明嘉莱只做原装正品现货
ON(安森美)
24+
TO-252-2(DPAK)
7348
原厂可订货,技术支持,直接渠道。可签保供合同
ON/安森美
21+
TO-252
20000
只做原装,质量保证
ON
25+
TO-252
6000
全新原装现货、诚信经营!
FAIRCHILD/仙童
24+
TO252
8950
BOM配单专家,发货快,价格低
ONSEMI
2021
NA
12600
全新原装!优势库存热卖中!
ON/安森美
2410+
80000
原装正品.假一赔百.正规渠道.原厂追溯.

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