80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

Discrete and MOSFET components, analog & logic ICs

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80 V, 8 A NPN high power bipolar transistor

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 80V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

COMPLEMENTARY SILICON

DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power amplifier applications.

SILICON PLASTIC POWER TRANSISTORS

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SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

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SILICON PLANAR POWER TRANSISTORS

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SILICON PLANAR POWER TRANSISTORS

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