MJD44H11晶体管资料
MJD44H11别名：MJD44H11三极管、MJD44H11晶体管、MJD44H11晶体三极管
MJD44H11生产厂家：韩国三星公司
MJD44H11制作材料：
MJD44H11性质：低频或音频放大 （LF）_功率放大 （PA）
MJD44H11封装形式：贴片封装
MJD44H11极限工作电压：
MJD44H11最大电流允许值：8A
MJD44H11最大工作频率：<1MHZ或未知
MJD44H11引脚数：3
MJD44H11最大耗散功率：20W
MJD44H11放大倍数：
MJD44H11图片代号：G-217
MJD44H11vtest：0
MJD44H11htest：999900
- MJD44H11atest：8
MJD44H11wtest：20
MJD44H11代换 MJD44H11用什么型号代替：
MJD44H11价格
参考价格：￥1.4379
型号：MJD44H11-1G 品牌：ONSemi 备注：这里有MJD44H11多少钱，2026年最近7天走势，今日出价，今日竞价，MJD44H11批发/采购报价，MJD44H11行情走势销售排行榜，MJD44H11报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD44H11 | 丝印代码：MJD44H11；80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele | NEXPERIA 安世 |   | |
丝印代码：MJD44H11；NPN Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Fast Switching Speeds • Low Collector Emitter Saturation Voltage | ONSEMI 安森美半导体 | | ||
丝印代码：MJD44H11；NPN Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Fast Switching Speeds • Low Collector Emitter Saturation Voltage | ONSEMI 安森美半导体 | | ||
丝印代码：MJD44H11；NPN Silicon Epitaxial Planar Transistor Features Low collector-emitter saturation voltage Fast switching speeds Complement to TMJD45H11 RoHS compliant with Halogen-free Qualified to AEC-Q101 Standards | LUGUANG 鲁光电子 | | ||
MJD44H11 | COMPLEMENTARY SILICON PNP TRANSISTORS MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app | STMICROELECTRONICS 意法半导体 | | |
MJD44H11 | isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl | ISC 无锡固电 | | |
MJD44H11 | Complementary Power Transistors Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packages are Available | KEXIN 科信电子 | | |
MJD44H11 | SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S | MOTOROLA 摩托罗拉 | | |
MJD44H11 | Gate Driver Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an | POWEREX | | |
MJD44H11 | Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | |
MJD44H11 | General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE44H • Fast Switching Speeds | FAIRCHILD 仙童半导体 | | |
MJD44H11 | SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | |
MJD44H11 | NPN, 80V, 8A, TO252 BVCEO > 80V\nIC = 8A Continuous Collector Current\nICM = 16A Peak Pulse Current\nIdeal for Power Switching or Amplification Applications\nComplementary PNP Type: MJD45H11\nLead-Free Finish; RoHS Compliant (Notes 1 & 2)\nHalogen and Antimony Free. “Green” Device (Note 3)\nAn automotive-compliant part | DIODES 美台半导体 | | |
MJD44H11 | 80 V, 8 A NPN high power bipolar transistor NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.\n PNP complement: MJD45H11 • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD44H series\n• Low collector emitter saturation voltage\n• Fast switching speeds; | NEXPERIA 安世 | | |
MJD44H11 | Complementary power transistors These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. Low collector-emitter saturation voltage\nFast switching speed\nSurface-mounting TO-252 (DPAK) power package in tape and reel (suffix \"T4\"); | STMICROELECTRONICS 意法半导体 | | |
MJD44H11 | Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
MJD44H11 | Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD44H11 | Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
MJD44H11 | Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES 文件：132.35 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD44H11 | Designed for general purpose power and switching 文件：302.13 Kbytes Page：2 Pages | RECTRON 丽正 | | |
MJD44H11 | isc Silicon NPN Power Transistors 文件：262.95 Kbytes Page：3 Pages | ISC 无锡固电 | | |
MJD44H11 | Complementary power transistors 文件：217.1 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD44H11 | COMPLEMENTARY SILICON PNP TRANSISTORS 文件：152.94 Kbytes Page：5 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD44H11 | Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIA 安世 | | |
MJD44H11 | Discrete and MOSFET components, analog & logic ICs 文件：11.62178 Mbytes Page：234 Pages | NEXPERIA 安世 | | |
丝印代码：MJD44H11A；80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El | NEXPERIA 安世 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S | MOTOROLA 摩托罗拉 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl | ISC 无锡固电 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S | MOTOROLA 摩托罗拉 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
Complementary power transistors MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON PNP TRANSISTORS 文件：152.94 Kbytes Page：5 Pages | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
NPN Epitaxial Silicon Transistor 文件：118.83 Kbytes Page：5 Pages | FAIRCHILD 仙童半导体 | | ||
Complementary power transistors 文件：217.1 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES 文件：132.35 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 8A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages | NEXPERIA 安世 | | ||
Discrete and MOSFET components, analog & logic ICs 文件：11.62178 Mbytes Page：234 Pages | NEXPERIA 安世 | |
MJD44H11产品属性
- 类型
描述
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Polarity：
NPN
- IC Continuous (A)：
8
- VCEO(sus) Min (V)：
80
- hFE Min：
40/60
- PTM Max (W)：
1.75/20
- fT Min (MHz)：
85/-
- Package Type：
DPAK INSERTION MOUNT/DPAK-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
25+ |
SOT-252 |
135 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST(意法半导体) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMICONDU |
24+ |
原封装 |
4206 |
原装现货假一罚十 |
|||
ST/意法 |
25+ |
TO-252 |
32000 |
ST/意法全新特价MJD44H11T4即刻询购立享优惠#长期有货 |
|||
ON |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
NEXPERIA/安世 |
25+ |
21+ |
5000 |
中赛美只做原装没有任何中间商差价 |
|||
ON |
2450+ |
TO-252 |
6541 |
只做原装正品假一赔十为客户做到零风险!! |
|||
长电 |
2021 |
TO-252 |
65820 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CJ/长电 |
26+ |
TO252-2 |
7500 |
一级代理优势现货,全新正品直营店 |
|||
ON |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
MJD44H11芯片相关品牌
MJD44H11规格书下载地址
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2019-11-1
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