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MJD44H11晶体管资料
MJD44H11别名：MJD44H11三极管、MJD44H11晶体管、MJD44H11晶体三极管
MJD44H11生产厂家：韩国三星公司
MJD44H11制作材料：
MJD44H11性质：低频或音频放大 （LF）_功率放大 （PA）
MJD44H11封装形式：贴片封装
MJD44H11极限工作电压：
MJD44H11最大电流允许值：8A
MJD44H11最大工作频率：<1MHZ或未知
MJD44H11引脚数：3
MJD44H11最大耗散功率：20W
MJD44H11放大倍数：
MJD44H11图片代号：G-217
MJD44H11vtest：0
MJD44H11htest：999900
- MJD44H11atest：8
MJD44H11wtest：20
MJD44H11代换 MJD44H11用什么型号代替：
MJD44H11价格
参考价格：￥1.4379
型号：MJD44H11-1G 品牌：ONSemi 备注：这里有MJD44H11多少钱，2025年最近7天走势，今日出价，今日竞价，MJD44H11批发/采购报价，MJD44H11行情走势销售排行榜，MJD44H11报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD44H11 | SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   |
MJD44H11 | SILICONPOWERTRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJD44H11 | COMPLEMENTARYSILICONPNPTRANSISTORS MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
MJD44H11 | GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplicationsD-PAKforSurfaceMountApplications GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularMJE44H •FastSwitchingSpeeds | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
MJD44H11 | ComplementaryPowerTransistors Features LeadFormedforSurfaceMountApplicationsinPlasticSleeves FastSwitchingSpeeds ComplementaryPairsSimplifiesDesigns Pb-FreePackagesareAvailable | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
MJD44H11 | GateDriver Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan | POWEREX Powerex Power Semiconductors |  | |
MJD44H11 | ComplementaryPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD44H11 | 80V,8ANPNhighpowerbipolartransistor 1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Ele | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
MJD44H11 | iscSiliconNPNPowerTransistors DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=1.0V(Max)@IC=8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD45H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinappl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MJD44H11 | Designedforgeneralpurposepowerandswitching 文件：302.13 Kbytes Page：2 Pages | RECTRON Rectron Semiconductor |  | |
MJD44H11 | iscSiliconNPNPowerTransistors 文件：262.95 Kbytes Page：3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
MJD44H11 | ComplementaryPowerTransistors 文件：97.32 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD44H11 | ComplementaryPowerTransistorsSILICONPOWERTRANSISTORS8AMPERES 文件：132.35 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD44H11 | Complementarypowertransistors 文件：217.1 Kbytes Page：8 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
MJD44H11 | COMPLEMENTARYSILICONPNPTRANSISTORS 文件：152.94 Kbytes Page：5 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
MJD44H11 | ComplementaryPowerTransistors 文件：76.24 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD44H11 | ComplementaryPowerTransistors 文件：114.33 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
ComplementaryPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICONPOWERTRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
ComplementaryPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
iscSiliconNPNPowerTransistors DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=1.0V(Max)@IC=8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD45H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinappl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
80V,8ANPNhighpowerbipolartransistor 1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD45H11A 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •El | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
ComplementaryPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICONPOWERTRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICONPOWERTRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICONPOWERTRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
Complementarypowertransistors MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
ComplementaryPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICONPOWERTRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SILICONPOWERTRANSISTORS Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
COMPLEMENTARYSILICONPNPTRANSISTORS 文件：152.94 Kbytes Page：5 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
ComplementaryPowerTransistors 文件：76.24 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementarypowertransistors 文件：217.1 Kbytes Page：8 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
NPNEpitaxialSiliconTransistor 文件：118.83 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
ComplementaryPowerTransistors 文件：114.33 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistorsSILICONPOWERTRANSISTORS8AMPERES 文件：132.35 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：97.32 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：76.24 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：76.24 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：97.32 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 8A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 80V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
ComplementaryPowerTransistors 文件：97.32 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：114.33 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：76.24 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Designedforgeneralpurposepowerandswitching 文件：302.13 Kbytes Page：2 Pages | RECTRON Rectron Semiconductor | | | |
ComplementaryPowerTransistors 文件：76.24 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：114.33 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：76.24 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：97.32 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
ComplementaryPowerTransistors 文件：76.24 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJD44H11产品属性
- 类型
描述
- 型号
MJD44H11
- 功能描述
两极晶体管 - BJT 8A 80V 20W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON |
11+ |
TO-252 |
3630 |
全新原装公司现货
|
|||
ON |
25+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
2023+ |
N/A |
4550 |
全新原装正品 |
|||
ON/安森美 |
23+ |
TO252 |
11508 |
全新原装正品现货可开票 |
|||
ON(安森美) |
23+ |
TO-251(IPAK) |
14095 |
公司只做原装正品,假一赔十 |
|||
ON |
23+ |
DPAK |
56000 |
||||
ON(安森美) |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
ON |
24+ |
SOT-252 |
12500 |
绝对原装现货,价格低,欢迎询购! |
|||
ST/意法 |
24+ |
TO-252 |
504574 |
免费送样原盒原包现货一手渠道联系 |
MJD44H11芯片相关品牌
MJD44H11规格书下载地址
MJD44H11参数引脚图相关
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- MJE1290
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- MJD32T4
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- MJD32CQ
- MJD32CG
- MJD32C1
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- MJD32B
- MJD32
- MJD31T4
- MJD31C
- MJD31
- MJD30C
- MJD3055
- MJD30
- MJD29C
- MJD2955
- MJD29
- MJD127(-1,T4)
- MJD127
- MJD122(-1,T4)
- MJD122
- MJD117(-1,T4)
- MJD117
- MJD112(-1,T4)
- MJD112
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2019-11-1
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