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MJD44H11晶体管资料

MJD44H11别名：MJD44H11三极管、MJD44H11晶体管、MJD44H11晶体三极管
MJD44H11生产厂家：韩国三星公司
MJD44H11制作材料：
MJD44H11性质：低频或音频放大（LF）_功率放大（PA）
MJD44H11封装形式：贴片封装
MJD44H11极限工作电压：
MJD44H11最大电流允许值：8A
MJD44H11最大工作频率：<1MHZ或未知
MJD44H11引脚数：3
MJD44H11最大耗散功率：20W
MJD44H11放大倍数：
MJD44H11图片代号：G-217
MJD44H11vtest：0
MJD44H11htest：999900
MJD44H11atest：8
MJD44H11wtest：20

MJD44H11代换 MJD44H11用什么型号代替：

MJD44H11价格

参考价格：￥1.4379

型号：MJD44H11-1G 品牌：ONSemi 备注：这里有MJD44H11多少钱，2025年最近7天走势，今日出价，今日竞价，MJD44H11批发/采购报价，MJD44H11行情走势销售排行榜，MJD44H11报价。

型号	功能描述	生产厂家企业	LOGO
MJD44H11	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE44H • Fast Switching Speeds	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
MJD44H11	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra	ONSEMI 安森美半导体	ONSEMI
MJD44H11	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“	ONSEMI 安森美半导体	ONSEMI
MJD44H11	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S	Motorola 摩托罗拉	Motorola
MJD44H11	Gate Driver Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an	POWEREX	POWEREX
MJD44H11	isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl	ISC 无锡固电	ISC
MJD44H11	Complementary Power Transistors Features Lead Formed for Surface Mount Applications in Plastic Sleeves Fast Switching Speeds Complementary Pairs Simplifies Designs Pb-Free Packages are Available	KEXIN 科信电子	KEXIN
MJD44H11	COMPLEMENTARY SILICON PNP TRANSISTORS MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD44H11	80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
MJD44H11	Complementary power transistors 文件：217.1 Kbytes Page：8 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD44H11	Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
MJD44H11	COMPLEMENTARY SILICON PNP TRANSISTORS 文件：152.94 Kbytes Page：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD44H11	Designed for general purpose power and switching 文件：302.13 Kbytes Page：2 Pages	RECTRON 丽正国际	RECTRON
MJD44H11	isc Silicon NPN Power Transistors 文件：262.95 Kbytes Page：3 Pages	ISC 无锡固电	ISC
MJD44H11	Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11	Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11	Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11	Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES 文件：132.35 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11	NPN, 80V, 8A, TO252	DIODES 美台半导体	DIODES
MJD44H11	80 V, 8 A NPN high power bipolar transistor	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
MJD44H11	Complementary power transistors	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD44H11_V01	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“	ONSEMI 安森美半导体	ONSEMI
MJD44H11-001	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra	ONSEMI 安森美半导体	ONSEMI
MJD44H11-1	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S	Motorola 摩托罗拉	Motorola
MJD44H11-1G	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“	ONSEMI 安森美半导体	ONSEMI
MJD44H11-1G	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in	ONSEMI 安森美半导体	ONSEMI
MJD44H11-252	isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl	ISC 无锡固电	ISC
MJD44H11A	80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
MJD44H11G	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“	ONSEMI 安森美半导体	ONSEMI
MJD44H11G	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in	ONSEMI 安森美半导体	ONSEMI
MJD44H11G	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra	ONSEMI 安森美半导体	ONSEMI
MJD44H11RL	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra	ONSEMI 安森美半导体	ONSEMI
MJD44H11RLG	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in	ONSEMI 安森美半导体	ONSEMI
MJD44H11RLG	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“	ONSEMI 安森美半导体	ONSEMI
MJD44H11T4	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S	Motorola 摩托罗拉	Motorola
MJD44H11T4	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra	ONSEMI 安森美半导体	ONSEMI
MJD44H11T4-A	Complementary power transistors MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD44H11T4G	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in	ONSEMI 安森美半导体	ONSEMI
MJD44H11T4G	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“	ONSEMI 安森美半导体	ONSEMI
MJD44H11T4G	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra	ONSEMI 安森美半导体	ONSEMI
MJD44H11T5	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra	ONSEMI 安森美半导体	ONSEMI
MJD44H11T5G	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in	ONSEMI 安森美半导体	ONSEMI
MJD44H11T5G	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“	ONSEMI 安森美半导体	ONSEMI
MJD44H11_03	COMPLEMENTARY SILICON PNP TRANSISTORS 文件：152.94 Kbytes Page：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD44H11_06	Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11_09	NPN Epitaxial Silicon Transistor 文件：118.83 Kbytes Page：5 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
MJD44H11_09	Complementary power transistors 文件：217.1 Kbytes Page：8 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD44H11_11	Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11_13	Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES 文件：132.35 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11_16	Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11-001	Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11-001G	Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11-1G	Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11-1G	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 80V 8A IPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJD44H11A	Discrete and MOSFET components, analog & logic ICs 文件：11.62183 Mbytes Page：234 Pages	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
MJD44H11AJ	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB）描述：TRANS NPN 80V 8A DPAK 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
MJD44H11G	Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11G	Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11G	Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11IP	Designed for general purpose power and switching 文件：302.13 Kbytes Page：2 Pages	RECTRON 丽正国际	RECTRON

MJD44H11产品属性

类型
描述
型号
MJD44H11
功能描述
两极晶体管 - BJT 8A 80V 20W NPN
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

MJD44H11供应商更多...

更新时间：2025-9-26 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MJD44H11T4	ST(意法半导体)	24+	TO-252	2669	原厂订货渠道,支持BOM配单一站式服务	询价
中天科工半导体（深圳）有限公司	MJD44H11T4	ST/意法	25+	TO-252	32000	ST/意法全新特价MJD44H11T4即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	MJD44H11T4G	ON	2450+	TO-252	6541	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市宝芯创电子有限公司	MJD44H11T4G	ON	21+	TO-252	20000	只做原装,公司现货,提供一站式BOM配单服务!	询价
深圳市拓亿芯电子有限公司	MJD44H11T4	ST/意法	23+	TO-252-3	12500	只做进口原装假一罚百	询价
深圳市汇莱威科技有限公司	MJD44H11T4	ST/意法	24+	TO-252	504574	免费送样原盒原包现货一手渠道联系	询价
深圳市明嘉莱科技有限公司	MJD44H11G	ON	25+	SMD	518000	明嘉莱只做原装正品现货	询价
深圳市得捷芯城科技有限公司	MJD44H11RLG	ON(安森美)	24+	TO-252-2(DPAK)	7348	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市恒凯威科技开发有限公司	MJD44H11-1G	ON/安森美	21+	TO-252	20000	只做原装,质量保证	询价
深圳市恒达亿科技有限公司	MJD44H11T4G	ON	25+	TO-252	6000	全新原装现货、诚信经营!	询价

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MJD44H11晶体管资料

MJD44H11价格

MJD44H11产品属性

MJD44H11供应商更多...

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MJD32CT4G

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